Elementary cell comprising a resistive memory and a device intended to form a selector, cell matrix, associated manufacturing and initialization methods
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorAnthonin VERDY
Life of this patent
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Abstract
An elementary cell includes a device and a non-volatile resistive memory mounted in a series, the device including an upper selector electrode, a lower selector electrode, a layer made up of a first active material, referred to as an active selecting layer, the device being intended to form a volatile selector; the memory including an upper memory electrode, a lower memory electrode, a layer made of at least a second active material, referred to as an active memory layer, the active selecting layer being in a conductive crystalline state and the memory being in a very strongly resistive state that is more resistive than the strongly resistive state of the memory.
Claims10
An elementary cell comprising a device and a non-volatile resistive memory connected in series, the device comprising:
- a selector upper electrode,
- a selector lower electrode,
- a layer made of a first active material forming an active selecting layer,
- said device being intended to form a volatile selector switching from a first resistive selector state to a second resistive selector state by applying a threshold voltage between the selector upper electrode and the selector lower electrode and switching back to the first resistive selector state as soon as a current flowing through it or a voltage across the selector upper electrode and the selector lower electrode becomes lower again than a holding current or voltage respectively, the first resistive selector state being more resistive than the second resistive selector state,
- said non-volatile resistive memory comprising:
- a memory upper electrode,
- a memory lower electrode,
- a layer made of at least one second active material forming an active memory layer,
- said non-volatile resistive memory switching from a first resistive memory state to a second resistive memory state by applying a voltage or a current between the memory upper electrode and the memory lower electrode,
- wherein said active selecting layer is in a conductive crystalline state and said non-volatile resistive memory is in an initial resistive memory state, the initial resistive memory state being more resistive than the first resistive memory state and the second resistive memory state.
Dependencies are inferred from the claim text.