Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsJenn-Gwo Hwu, Hao-Hsiung Lin, Chang-Feng Yan, Samuel C. Pan
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Abstract
A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.
Claims20
A metal-insulator-semiconductor-insulator-metal (MISIM) device, comprising:
- a semiconductor layer;
- an insulating layer disposed over an upper surface of the semiconductor layer;
- a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface;
- and
- first and second electrodes disposed over the insulating layer and spaced-apart from each other,
- wherein the first electrode includes a first contact electrode, an inner electrode, and a first connecting electrode connecting the first contact electrode and the first inner electrode to each other, and
- the second electrode includes a second contact electrode, an outer electrode partially surrounding the inner electrode of the first electrode, and a second connecting electrode connecting the second contact electrode and the outer electrode to each other.
A metal-insulator-semiconductor-insulator-metal (MISIM) device, comprising:
- a semiconductor layer;
- an insulating layer disposed over an upper surface of the semiconductor layer;
- a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface;
- and
- first and second electrodes disposed over the insulating layer and spaced-apart from each other,
- wherein the first electrode includes a first contact electrode, a first coupling electrode, and a first connecting electrode connecting the first contact electrode and the first coupling electrode to each other,
- the second electrode includes a second contact electrode, a second coupling electrode, and a second connecting electrode connecting the second contact electrode and the second coupling electrode to each other, and
- the first coupling electrode and the second coupling electrode comprise comb-shaped arrays.
A metal-insulator-semiconductor-insulator-metal (MISIM) device, comprising:
- a semiconductor layer;
- an insulating layer disposed over an upper surface of the semiconductor layer;
- a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface;
- and
- first and second electrodes disposed over the insulating layer and spaced-apart from each other,
- wherein the semiconductor layer is an N-type semiconductor, and the first electrode and the second electrode are made of a material having a flatband voltage VFB greater than 0;
- or
- the semiconductor layer is a P-type semiconductor, and the first electrode and the second electrode are made of a material having a flatband voltage VFB less than 0.
Dependencies are inferred from the claim text.