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US 11,605,674 B2Granted
Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJenn-Gwo Hwu, Hao-Hsiung Lin, Chang-Feng Yan, Samuel C. Pan
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Abstract
A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.
Claims20
A semiconductor device, comprising:
- a semiconductor layer;
- an insulating oxide layer or an insulating nitride layer disposed over an upper surface of the semiconductor layer;
- a layer comprising one or more of aluminum, gold, titanium, polysilicon, silver, nickel, and copper disposed over a lower surface of the semiconductor layer opposing the upper surface;
- and
- first and second electrodes disposed over the insulating oxide or insulating nitride layer,
- wherein the second electrode partially surrounds the first electrode and a portion of the first electrode extends beyond the second electrode.
3 more elements
A semiconductor device, comprising:
- a semiconductor layer;
- an oxide layer or a nitride layer disposed over an upper surface of the semiconductor layer;
- a layer comprising one or more of aluminum, gold, titanium, polysilicon, silver, nickel, and copper disposed over a lower surface of the semiconductor layer opposing the upper surface;
- and
- first and second electrodes disposed over the oxide or nitride layer,
- wherein the first electrode includes a plurality of first elongated portions extending in a first direction,
- the second electrode includes a plurality of a second elongated portions extending in a second direction,
- wherein the first and second directions are opposing directions, and
- wherein the first and second elongated portions are arranged in an alternating manner along a third direction that is perpendicular to the first and second directions.
6 more elements
A semiconductor device, comprising:
- a semiconductor layer;
- an insulating oxide or an insulating nitride layer disposed over an upper surface of the semiconductor layer;
- a layer comprising one or more of aluminum, gold, titanium, polysilicon, silver, nickel, and copper disposed over a lower surface of the semiconductor layer opposing the upper surface;
- and
- first and second electrodes disposed over the insulating oxide or insulating nitride layer and spaced-apart from each other,
- wherein the first electrode completely surrounds the second electrode as seen in plan view.
3 more elements
Dependencies are inferred from the claim text.