H10N 70/8833
Binary metal oxides
Official title: {Binary metal oxides, e.g. TaOx}
H10N70/8833 (Binary metal oxides) appears on 4,015 US grants and 4,677 published applications in this corpus.
Search patents in H10N- Granted patents
- 4,015
- Published applications
- 4,677
- Assignees
- 415
- Inventors
- 3,906
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 0 |
| 2003 | 0 | 6 |
| 2004 | 2 | 6 |
| 2005 | 4 | 17 |
| 2006 | 13 | 40 |
| 2007 | 13 | 57 |
| 2008 | 16 | 112 |
| 2009 | 48 | 137 |
| 2010 | 92 | 176 |
| 2011 | 136 | 238 |
| 2012 | 181 | 256 |
| 2013 | 290 | 337 |
| 2014 | 324 | 379 |
| 2015 | 379 | 327 |
| 2016 | 345 | 272 |
| 2017 | 283 | 264 |
| 2018 | 233 | 236 |
| 2019 | 272 | 286 |
| 2020 | 256 | 316 |
| 2021 | 253 | 280 |
| 2022 | 229 | 262 |
| 2023 | 195 | 201 |
| 2024 | 180 | 170 |
| 2025 | 164 | 153 |
| 2026 | 98 | 149 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Diode device with programmable conducting current and array preparation method thereof29 Sep 2026US 12,751,218 B2Zhejiang University
- Semiconductor integrated circuit device with first memory cell and third memory cell, and manufacturing method therefor15 Sep 2026US 12,740,333 B2Xiamen Industrial Technology Research Institute Co., Ltd.
- Resistive random access memory device and fabrication method thereof15 Sep 2026US 12,740,338 B2United Microelectronics Corp.
- Memory device, memory integrated circuit and manufacturing method thereof15 Sep 2026US 12,740,339 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells8 Sep 2026US 12,732,193 B2iCometrue Company Ltd.
- Semiconductor structure containing RRAM and method for preparing same8 Oct 2026US 2026/0313915 A1Shanghai Huali Integrated Circuit Corporation
- Resistive random-access memory (rram) devices with electrodes containing ruthenium alloys8 Oct 2026US 2026/0314274 A1TetraMem Inc.
- Memory device1 Oct 2026US 2026/0301777 A1Kioxia Corporation
- Logic drive using standard commodity programmable logic ic chips comprising non-volatile random access memory cells1 Oct 2026US 2026/0303097 A1iCometrue Company Ltd.
- Metal-insulator transition material-based multiport radio frequency switch24 Sep 2026US 2026/0293538 A1Dell Products L. P.
Most cited
By later US patents
- Composite memory material comprising a mixture of phase-change memory material and dielectric material389US 5,825,046 AEnergy Conversion Devices, Inc. · 1998
- Resistive random accress memory containing a conformal titanium aluminum carbide film and method of making330US 10,361,366 B2Tokyo Electron Limited · 2019
- Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines288US 7,983,065 B2SanDisk 3D LLC · 2011
- Bridge resistance random access memory device with a singular contact structure276US 7,608,848 B2Macronix International Co., Ltd. · 2009
- Multi-level cell resistance random access memory with metal oxides268US 7,697,316 B2Macronix International Co., Ltd. · 2010