H10H 20/8252
Characterised by the dopants
Official title: {characterised by the dopants}
H10H20/8252 (Characterised by the dopants) appears on 652 US grants and 772 published applications in this corpus.
Search patents in H10H- Granted patents
- 652
- Published applications
- 772
- Assignees
- 254
- Inventors
- 1,371
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 4 | 0 |
| 1997 | 8 | 0 |
| 1998 | 13 | 0 |
| 1999 | 18 | 0 |
| 2000 | 12 | 0 |
| 2001 | 11 | 4 |
| 2002 | 9 | 13 |
| 2003 | 10 | 11 |
| 2004 | 6 | 9 |
| 2005 | 6 | 7 |
| 2006 | 6 | 4 |
| 2007 | 5 | 14 |
| 2008 | 5 | 15 |
| 2009 | 5 | 11 |
| 2010 | 11 | 12 |
| 2011 | 17 | 26 |
| 2012 | 8 | 27 |
| 2013 | 25 | 20 |
| 2014 | 28 | 36 |
| 2015 | 32 | 48 |
| 2016 | 38 | 44 |
| 2017 | 37 | 34 |
| 2018 | 25 | 35 |
| 2019 | 35 | 71 |
| 2020 | 47 | 53 |
| 2021 | 42 | 51 |
| 2022 | 41 | 43 |
| 2023 | 30 | 66 |
| 2024 | 28 | 57 |
| 2025 | 52 | 30 |
| 2026 | 35 | 31 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- LED device and method of manufacture6 Oct 2026US 12,757,553 B2Poro Technologies Ltd
- LED device having porous region of III-nitride material15 Sep 2026US 12,740,216 B2Poro Technologies Ltd
- Multi-quantum well semiconductor structure including a scandium nitride insertion layer25 Aug 2026US 12,720,914 B2Enkris Semiconductor, Inc.
- Light-emitting diode with emissive regions including rare earth ions25 Aug 2026US 12,720,917 B2Centre National De La Recherche Scientifique
- Display device and manufacturing method for light emitting element4 Aug 2026US 12,701,826 B2Samsung Display Co., Ltd.
- Semiconductor structure with superlattices1 Oct 2026US 2026/0305019 A1Silanna UV Technologies Pte Ltd
- Light-emitting element, display device including the same, and semiconductor structure1 Oct 2026US 2026/0305022 A1Samsung Display Co., Ltd.
- Optoelectronic substrate and light source and method of manufacturing thereof24 Sep 2026US 2026/0293379 A1Ingantec Corporation
- Thin quantum barrier with high aluminum content for ultraviolet light emitters17 Sep 2026US 2026/0282604 A1The Regents of the University of California
- Display device and method of manufacturing display device17 Sep 2026US 2026/0282611 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Double heterojunction light emitting diode with gallium nitride active layer519US 5,739,554 ACree Research, Inc. · 1998
- Monolithic array of light emitting diodes for the generation of light at multiple wavelengths and its use for multicolor display applications459US 5,952,680 AInternational Business Machines Corporation · 1999
- Double heterojunction light emitting diode with gallium nitride active layer379US 6,120,600 ACree, Inc. · 2000
- Light-emitting gallium nitride-based compound semiconductor device301US 5,578,839 ANichia Chemical Industries, Ltd. · 1996
- Gallium nitride-based III-V group compound semiconductor device and method of producing the same291US 5,563,422 ANichia Chemical Industries, Ltd. · 1996