Semiconductor structure with superlattices
AssigneeSilanna UV Technologies Pte Ltd
InventorPetar Atanackovic
Life of this patent
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Abstract
A semiconductor structure includes a first conductivity type region and an i-type active region adjacent to the first conductivity type region. The first conductivity type region is a p-type or n-type region and includes a first superlattice with a plurality of first unit cells. The i-type active region includes an i-type superlattice with a plurality of i-type unit cells. Each unit cell includes at least two distinct substantially single crystal layers. The average alloy content of the unit cells is constant along a growth direction. The structure further includes a mesa including the i-type active region, where the mesa has side walls covered by a passivation layer.
Claims27
A semiconductor structure, comprising:
- a first conductivity type region comprising a first superlattice;
- and
- an i-type active region adjacent to the first conductivity type region, the i-type active region comprising an i-type superlattice;
- a mesa comprising the i-type active region, wherein the mesa comprises side walls;
- and
- a passivation layer that covers at least a portion of the side walls;
- wherein:
- the first conductivity type region is a p-type region or an n-type region;
- the first superlattice is comprised of a plurality of first unit cells;
- the i-type superlattice is comprised of a plurality of i-type unit cells;
- each of the plurality of first unit cells comprises a first set of at least two distinct substantially single crystal layers;
- each of the plurality of i-type unit cells comprises a second set of at least two distinct substantially single crystal layers;
- an average alloy content of the plurality of the first unit cells and the i-type unit cells is constant along a growth direction.
Dependencies are inferred from the claim text.