Double heterojunction light emitting diode with gallium nitride active layer
AssigneeCree, Inc.
InventorsJohn A. Edmond, Hua-Shuang Kong
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Abstract
A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between the aluminum gallium nitride layers, in which the gallium nitride layer is co-doped with both a Group II acceptor and a Group IV donor, with one of the dopants being present in an amount sufficient to give the gallium nitride layer a net conductivity type, so that the active layer forms a p-n junction with the adjacent layer of aluminum gallium nitride having the opposite conductivity type.
Claims7
A method of producing an active layer of zinc and silicon compensated n-type gallium nitride for a double heterostructure light emitting diode that emits in the blue portion of the visible spectrum, the method comprising:
- introducing vaporized sources of gallium, nitrogen, silicon and zinc into a chemical vapor deposition system that includes a semiconductor substrate compatible with the growth of gallium nitride thereon;
- and while
- maintaining the temperature high enough to promote the epitaxial growth of zinc and silicon compensated gallium nitride, but lower than the temperature at which the gallium nitride would decompose.
Dependencies are inferred from the claim text.