Light-emitting diode with emissive regions including rare earth ions
AssigneesCommissariat A L'energie Atomique Et Aux Energies Alternatives, Centre National De La Recherche Scientifique
InventorsBruno Daudin, Gwenole Jacopin
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Abstract
A method for producing a display device comprising several pixels. The production of each pixel includes producing a stack forming p-i-n junctions of semiconductors corresponding to compounds comprising nitrogen and aluminium and/or gallium and/or indium atoms; implanting first, second and third rare earth ions respectively in first, second and third parts of a nest portion, through masks comprising first, second and third openings disposed respectively facing first, second and third regions of the stack respectively forming first, second and third light emission regions.
Claims14
A method for producing a display device comprising several pixels, the production of each pixel comprises:
- producing a stack comprising at least a first portion of a n-doped semiconductor and a third portion of an unintentionally doped semiconductor disposed on the first portion, wherein the semiconductors of the first and third portions correspond to compounds comprising nitrogen atoms and aluminum atoms, gallium atoms, indium atoms, or a combination thereof, then
- implanting first rare earth ions in at least one first part of the third portion through a first mask comprising at least one first opening disposed facing at least one first region of the stack, thereby forming at least one first light emission region;
- implanting second rare earth ions different from the first rare earth ions, in at least one second part of the third portion distinct from the first part of the third portion, through a second mask comprising at least one second opening disposed facing at least one second region of the stack distinct from the first region, thereby forming at least one second light emission region,
- implanting third rare earth ions different from the first and second rare earth ions, in at least one third part of the third portion distinct from the first and second parts of the third portion, through a third mask comprising at least one third opening disposed facing at least one third region of the stack distinct from the first and second regions, thereby forming at least one third light emission region;
- wherein the stack further comprises a second portion of the p-doped semiconductor such that the third portion is disposed between the first and second portions, wherein the semiconductor of the second portion corresponds to a compound comprising nitrogen atoms and aluminum atoms, gallium atoms, indium atoms, or a combination thereof, wherein the second portion is produced before or after the implanting the first, second and third rare earth ions;
- and
- wherein the first, second and third regions of the stack are distinct from each other in a plane parallel to an upper face of the stack.
A display device comprising several pixels, each pixel comprises:
- a stack comprising at least a first portion of a n-doped semiconductor, a second portion of the p-doped semiconductor and a third portion of an unintentionally doped semiconductor disposed between the first and second portions, wherein the semiconductors of the first, second and third portions correspond to compounds comprising nitrogen atoms and aluminum atoms, gallium atoms, indium atoms, or a combination thereof;
- first rare earth ions implanted in at least one first part of the third portion belonging to at least one first region of the stack, to form at least one first light emission region;
- second rare earth ions, different from the first rare earth ions, implanted in at least one second part of the third portion distinct from the first part of the third portion and belonging to at least one second region of the stack, distinct from the first region, to form at least one second light emission region;
- third rare earth ions, different from the first and second rare earth ions, implanted in at least one third part of the third portion distinct from the first and second parts of the third portion and belonging to at least one third region of the stack, distinct from the first and second regions, to form at least one third light emission region;
- and
- wherein the first, second and third regions of the stack are distinct from each other and are located in mutually exclusive locations on the same geometrical plane parallel to the upper face of the stack.
Dependencies are inferred from the claim text.