H10H 20/8215
Characterised by crystalline imperfections
Official title: {characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping}
H10H20/8215 (Characterised by crystalline imperfections) appears on 831 US grants and 1,003 published applications in this corpus.
Search patents in H10H- Granted patents
- 831
- Published applications
- 1,003
- Assignees
- 297
- Inventors
- 1,802
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 5 | 0 |
| 1997 | 3 | 0 |
| 1998 | 12 | 0 |
| 1999 | 14 | 0 |
| 2000 | 14 | 0 |
| 2001 | 10 | 4 |
| 2002 | 13 | 7 |
| 2003 | 12 | 18 |
| 2004 | 11 | 12 |
| 2005 | 12 | 16 |
| 2006 | 11 | 19 |
| 2007 | 7 | 23 |
| 2008 | 9 | 19 |
| 2009 | 14 | 37 |
| 2010 | 21 | 35 |
| 2011 | 24 | 30 |
| 2012 | 27 | 40 |
| 2013 | 31 | 34 |
| 2014 | 43 | 45 |
| 2015 | 43 | 56 |
| 2016 | 53 | 50 |
| 2017 | 43 | 53 |
| 2018 | 44 | 59 |
| 2019 | 57 | 58 |
| 2020 | 41 | 50 |
| 2021 | 43 | 57 |
| 2022 | 37 | 57 |
| 2023 | 34 | 64 |
| 2024 | 36 | 78 |
| 2025 | 47 | 51 |
| 2026 | 43 | 31 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Light emitting element and production method therefor29 Sep 2026US 12,751,128 B2Toyoda Gosei Co., Ltd.
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Light-emitting device and light-emitting apparatus8 Sep 2026US 12,733,296 B2Anhui Sanan Optoelectronics Co., Ltd.
- Multi-quantum well semiconductor structure including a scandium nitride insertion layer25 Aug 2026US 12,720,914 B2Enkris Semiconductor, Inc.
- Light-emitting diode with emissive regions including rare earth ions25 Aug 2026US 12,720,917 B2Centre National De La Recherche Scientifique
- Light-emitting element, display device including the same, and semiconductor structure1 Oct 2026US 2026/0305022 A1Samsung Display Co., Ltd.
- Nitride semiconductor element and method of manufacturing nitride semiconductor element24 Sep 2026US 2026/0293378 A1Nichia Corporation
- Light emitting element and display device including the same17 Sep 2026US 2026/0282610 A1Samsung Display Co., Ltd.
- Light emitting element and display device10 Sep 2026US 2026/0271437 A1Sharp Display Technology Corporation
- Light emitting diode having improved hole injection structure10 Sep 2026US 2026/0271438 A1Seoul Viosys Co., Ltd.
Most cited
By later US patents
- Light-emitting gallium nitride-based compound semiconductor device301US 5,578,839 ANichia Chemical Industries, Ltd. · 1996
- Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom275US 6,504,180 B1Bruseel · 2003
- Semicoductor device having a hetero interface with a lowered barrier272US 5,821,555 AKabushiki Kaisha Toshiba · 1998
- GaN LEDs with improved output coupling efficiency220US 6,091,085 AAgilent Technologies, Inc. · 2000
- Nitride-based semiconductor element and method for manufacturing the same195US 6,015,979 AKabushiki Kaisha Toshiba · 2000