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US 2026/0271438 A1Published application
Light emitting diode having improved hole injection structure
AssigneeSeoul Viosys Co., Ltd.
InventorsHongjae YOO, SungRyong CHO, Miso KO, Eunmi CHOI
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Abstract
A light emitting device according to an embodiment of the present disclosure includes a first conductivity type semiconductor region; a second conductivity type semiconductor region; and a light emitting region disposed between the first conductivity type semiconductor region and the second conductivity type semiconductor region, in which the second conductivity type semiconductor region includes a plurality of regions including Mg balls.
Claims20
A light emitting apparatus, comprising:
- a base substrate;
- and
- a light emitter disposed on the base substrate and including a light source,
- wherein the light source includes:
- a first conductivity type semiconductor layer;
- a second conductivity type semiconductor layer;
- and
- a light emitting layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer and including a well layer,
- wherein the second conductivity type semiconductor layer includes a first region, a second region, and a third region,
- wherein the second region is disposed between the first region and the third region and has a thickness that is different from a thickness of each of the first region and the third region,
- wherein the light emitting layer is closer to the first region than the third region, and
- wherein an amount of Magnesium (Mg) balls of the second region is lower than an amount of Mg balls of the first region.
9 more elements
A light emitting apparatus, comprising:
- a base substrate;
- and
- a light emitter disposed on the base substrate and including a light source,
- wherein the light source includes:
- a first conductivity type semiconductor layer;
- a second conductivity type semiconductor layer;
- and
- a light emitting layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer and including a well layer,
- wherein the second conductivity type semiconductor layer includes a first region, a second region, and a third region,
- wherein the second region is disposed between the first region and the third region and has a thickness that is different from a thickness of each of the first region and the third region,
- wherein the light emitting layer is closer to the first region than the third region, and
- wherein an amount of Magnesium (Mg) balls of the second region is lower than an amount of Mg balls of the third region.
9 more elements
A light emitting apparatus, comprising:
- a base substrate;
- and
- a light emitter disposed on the base substrate and including a light source,
- wherein the light source includes:
- a first conductivity type semiconductor layer;
- a second conductivity type semiconductor layer;
- and
- a light emitting layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer and including a well layer,
- wherein the second conductivity type semiconductor layer includes a first region, a second region, and a third region,
- wherein the second region is disposed between the first region and the third region and has a thickness that is different from a thickness of the first region or the third region,
- wherein the light emitting layer is closer to the first region than the third region, and
- wherein an amount of Magnesium (Mg) balls of the second region is lower than an amount of Mg balls of the third region.
9 more elements
Dependencies are inferred from the claim text.