Nitride-based semiconductor element and method for manufacturing the same

A nitride-based light emitting element comprising:

• a first layer;
• a mask formed on said first layer, said mask having a plurality of opening portions;
• a nitride-based compound semiconductor layer formed on said mask, said nitride-based semiconductor layer including:
• a first region which has threading dislocations produced in such a manner that, in approximately a middle portion between two adjacent opening portions of said plurality of opening portions in said mask, a plurality of dislocations extend vertically to a surface of said mask;
• and
• a second region which comprises portions other than said middle portions and free from said dislocations;
• and
• a light-emitting layer formed above said mask having said plurality of opening portions, said light-emitting layer being sandwiched between current injection layers.

A nitride-based semiconductor element comprising:

• a first layer;
• a mask formed on said first layer, said mask having a plurality of opening portions;
• a nitride-based flattening semiconductor layer formed on said mask;
• and
• a desired element structure formed on said mask with said nitride-based flattening semiconductor layer interposed therebetween.