H10F 77/12485
Comprising nitride compounds
Official title: {comprising nitride compounds, e.g. InGaN}
H10F77/12485 (Comprising nitride compounds) appears on 206 US grants and 288 published applications in this corpus.
Search patents in H10F- Granted patents
- 206
- Published applications
- 288
- Assignees
- 118
- Inventors
- 465
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 1 | 1 |
| 2007 | 1 | 1 |
| 2008 | 0 | 0 |
| 2009 | 1 | 1 |
| 2010 | 0 | 5 |
| 2011 | 0 | 4 |
| 2012 | 3 | 10 |
| 2013 | 3 | 20 |
| 2014 | 6 | 9 |
| 2015 | 16 | 23 |
| 2016 | 15 | 16 |
| 2017 | 17 | 21 |
| 2018 | 19 | 27 |
| 2019 | 18 | 28 |
| 2020 | 17 | 27 |
| 2021 | 21 | 32 |
| 2022 | 23 | 20 |
| 2023 | 10 | 14 |
| 2024 | 14 | 13 |
| 2025 | 10 | 6 |
| 2026 | 10 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Use of a low bandgap absorber region in a laser power converter29 Sep 2026US 12,751,093 B2The Boeing Company
- Solar blind solid state gallium containing photodiode device and related method29 Sep 2026US 12,751,096 B2Palomino Laboratories, Inc.
- Device including a semiconductor layer with graded composition30 Jun 2026US 12,672,390 B2Sensor Electronic Technology, Inc.
- Method for manufacturing, by differentiated electrochemical porosification, a growth substrate including mesas having various porosification levels16 Jun 2026US 12,660,365 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Photonic materials14 Apr 2026US 12,604,556 B2Ohio State Innovation Foundation
- Ferroelectric iii-nitride alloy-based photodetectors10 Sep 2026US 2026/0271411 A1The Regents of the University of Michigan
- Inverted metamorphic multijunction solar cells having a permanent supporting substrate2 Jul 2026US 2026/0190504 A1SolAero Technologies Corp.
- Optical device and method2 Jul 2026US 2026/0190534 A1KYOCERA SLD Laser, Inc.
- Gallium nitride containing high speed photodiode device and related method11 Jun 2026US 2026/0164837 A1KYOCERA Corporation
- Photodetector, photoelectric sensor, methods of forming the same and determining concentration21 May 2026US 2026/0143829 A1Nanyang Technological University
Most cited
By later US patents
- Fabrication method for AlGaIn NPAsSb based devices84US 5,937,274 AHitachi, Ltd. · 1999
- Gallium nitride material devices and methods of forming the same72US 7,233,028 B2Nitronex Corporation · 2007
- Wide-bandgap, lattice-mismatched window layer for a solar conversion device51US 7,119,271 B2The Boeing Company · 2006
- Lattice matchable alloy for solar cells15US 8,575,473 B2Solar Junction Corporation · 2013
- High efficiency multijunction solar cells14US 8,962,993 B2Solar Junction Corporation · 2015