Fabrication method for AlGaIn NPAsSb based devices

A method for manufacturing a semiconductor device, comprising the step of:

• epitaxially growing a plurality of semiconductor layers by using materials selected from the group consisting of Al, Ga, In, N, P, As and Sb, said plurality of semiconductor layers including a layer of nitrogen-containing alloy semiconductor Al.sub.a Ga.sub.b In.sub.1-a-b N.sub.x P.sub.y As.sub.z Sb.sub.1-x-y-z (0.ltoreq.a.ltoreq.1, 0.ltoreq.b.ltoreq.1, 0<x<1, 0.ltoreq.y<1, 0.ltoreq.z<1) formed using nitrogen radical as nitrogen material, in a vacuum of substantially 10.sup.-2 Torr or higher vacuum,
• wherein, in said epitaxially growing a plurality of semiconductor layers, for at least two semiconductor layers out of said plurality of semiconductor layers, a value of lattice strain of said at least two semiconductor layers is controlled so as to be less than a critical strain at which misfit dislocations are generated at an interface between said two adjacent semiconductor layers.

A method for manufacturing a semiconductor device, comprising the steps of:

• preparing Al, Ga, In, N, P, As and Sb as materials for a semiconductor device;
• and
• epitaxially growing a plurality of semiconductor layers by using said materials, including a layer of nitrogen-containing alloy semiconductor Al.sub.a Ga.sub.b In.sub.1-a-b N.sub.x P.sub.y As.sub.z Sb.sub.1-x-y-z (0.ltoreq.a.ltoreq.1, 0.ltoreq.b.ltoreq.1, 0<x<1, 0.ltoreq.y<1, 0.ltoreq.z<1) using nitrogen radical as nitrogen material, in a vacuum of substantially 10.sup.-2 Torr or higher, wherein as impurity materials for said semiconductor device, C, Be, Si and Sn are used.

A method for manufacturing a semiconductor device, comprising the steps of:

• preparing Al, Ga, In, N, P, As and Sb as materials for a semiconductor device;
• and
• epitaxially growing a plurality of semiconductor layers by using said materials, including a layer of nitrogen-containing alloy semiconductor Al.sub.a Ga.sub.b In.sub.1-a-b N.sub.x P.sub.y As.sub.z Sb.sub.1-x-y-z (0.ltoreq.a.ltoreq.1, 0.ltoreq.b.ltoreq.1, 0<x<1, 0.ltoreq.y<1, 0.ltoreq.z<1) using nitrogen radical as nitrogen material, in a vacuum of substantially 10.sup.-2 Torr or higher, wherein said nitrogen radical is nitrogen obtained by activating nitrogen molecules by radio frequency plasma.