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US 12,672,390 B2Granted
Device including a semiconductor layer with graded composition
AssigneeSensor Electronic Technology, Inc.
InventorsRakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur
Life of this patent
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Abstract
An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.
Claims20
An optoelectronic device comprising:
- a mounting substrate including a mounting region and contact pads;
- and
- a light source electrically disposed on the mounting region and connected to the contact pads, the light source including a heterostructure, the heterostructure comprising:
- a group III nitride active region including a series of alternating quantum wells and barriers, wherein the active region is configured to generate radiation having a peak wavelength within a range of wavelengths;
- a group III nitride n-type layer having an n-type doping, the n-type layer located on a first side of the active region;
- a group III nitride p-type layer having a p-type dopant concentration, the p-type layer located on a second side of the active region opposite the first side, wherein the p-type layer has a non-uniform p-type doping profile region and at least one area of the p-type layer is transparent to the peak wavelength generated by the active region, wherein the at least one area of the p-type layer that is transparent to the peak wavelength includes an aluminum molar fraction decreasing with respect to distance from the active region and a first region in which the p-type dopant concentration has a first inclination with respect to distance from the active region and a second region in which the p-type dopant concentration has a second inclination with respect to distance from the active region, wherein the second inclination is different from the first inclination;
- a group III nitride electron blocking layer located between the active region and the p-type layer;
- and
- a set of contact layers connected to the contact pads, where the set of pads includes a p-type contact layer, wherein a doping concentration for p-type doping in the group Ill nitride electron blocking layer is substantially less than that of a doping concentration of the p-type doping in the p-type contact layer.
6 more elements
An optoelectronic device comprising:
- a mounting substrate including a mounting region and contact pads;
- and
- a light source electrically disposed on the mounting region and connected to the contact pads, the light source including a heterostructure, the heterostructure comprising:
- a group III nitride active region including a series of alternating quantum wells and barriers, wherein the active region is configured to generate radiation having a peak wavelength within a range of wavelengths;
- a group III nitride n-type layer having an n-type doping, the n-type layer located on a first side of the active region;
- a group III nitride p-type layer having a p-type dopant concentration, the p-type layer located on a second side of the active region opposite the first side, wherein the p-type layer has a non-uniform p-type doping profile and at least one area of the p-type layer has a different transparency to the peak wavelength generated by the active region than another area of the p-type layer, wherein the at least one area of the p-type layer having the different transparency includes an aluminum molar fraction decreasing with respect to distance from the active region and a first region in which the p-type dopant concentration has a first inclination with respect to distance from the active region and a second region in which the p-type dopant concentration has a second inclination with respect to distance from the active region, wherein the second inclination is different from the first inclination;
- a group III nitride electron blocking layer located between the active region and the p-type layer;
- and
- a set of contact layers connected to the contact pads, where the set of contact layers includes a p-type contact layer, wherein a doping concentration for p-type doping in the group Ill nitride electron blocking layer is substantially less than that of a doping concentration of the p-type doping in the p-type contact layer.
6 more elements
An optoelectronic device comprising:
- a mounting substrate including a mounting region and contact pads;
- and
- a light source electrically disposed on the mounting region and connected to the contact pads, the light source including a heterostructure, the heterostructure comprising:
- a group III nitride active region including a series of alternating quantum wells and barriers, wherein the active region is configured to generate radiation having a peak wavelength within a range of wavelengths;
- a group Ill nitride n-type layer having an n-type doping, the n-type layer located on a first side of the active region;
- a group III nitride p-type layer having a p-type dopant concentration, the p-type layer located on a second side of the active region opposite the first side, wherein at least one area of the p-type layer is transparent to the peak wavelength generated by the active region, wherein the at least one area of the p-type layer that is transparent to the peak wavelength includes an aluminum molar fraction decreasing with respect to distance from the active region and a first region in which the p-type dopant concentration remains substantially constant and a second region in which the p-type dopant concentration is increasing with respect to distance from the active region;
- a group Ill nitride electron blocking layer located between the active region and the p-type layer;
- a p-type electrode electrically connected to the group Ill nitride p-type layer, wherein the p-type electrode comprises at least one conductive layer wherein a doping concentration for p-type doping in the group Ill nitride electron blocking layer is substantially less than that of a doping concentration of the p-type doping in the p-type electrode;
- and
- an n-type electrode electrically connected to the group Ill nitride n-type layer, wherein the n-type electrode comprises at least conductive layer.
7 more elements
Dependencies are inferred from the claim text.