H10D 84/619
Combinations of lateral bjts and one or more of diodes, resistors or
Official title: {Combinations of lateral BJTs and one or more of diodes, resistors or capacitors}
H10D84/619 (Combinations of lateral bjts and one or more of diodes, resistors or) appears on 98 US grants and 104 published applications in this corpus.
Search patents in H10D- Granted patents
- 98
- Published applications
- 104
- Assignees
- 58
- Inventors
- 185
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 2 |
| 2004 | 2 | 1 |
| 2005 | 1 | 2 |
| 2006 | 2 | 4 |
| 2007 | 0 | 3 |
| 2008 | 2 | 1 |
| 2009 | 3 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 2 |
| 2012 | 1 | 1 |
| 2013 | 0 | 4 |
| 2014 | 3 | 5 |
| 2015 | 5 | 5 |
| 2016 | 12 | 11 |
| 2017 | 6 | 4 |
| 2018 | 4 | 8 |
| 2019 | 8 | 7 |
| 2020 | 7 | 7 |
| 2021 | 3 | 8 |
| 2022 | 7 | 6 |
| 2023 | 7 | 8 |
| 2024 | 7 | 8 |
| 2025 | 6 | 2 |
| 2026 | 3 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor device in forksheet transistor structure including passive device and bspdn structure23 Apr 2026US 2026/0114026 A1Samsung Electronics Co., Ltd.
- Transient voltage suppressor structure having multiple discharging paths23 Apr 2026US 2026/0114052 A1Amazing Microelectronic Corp.
- Electrostatic discharge protection device5 Feb 2026US 2026/0040692 A1Samsung Electronics Co., Ltd.
- Deep trench capacitor fuse structure for high voltage breakdown defense and methods for forming the same9 Oct 2025US 2025/0318274 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Bidirectional output semiconductor field effect transistor and method for its maufacture39US 4,721,986 AInternational Rectifier Corporation · 1988
- Integrated RF front end system32US 9,048,284 B2Skyworks Solutions, Inc. · 2015
- Diode formed in integrated-circuit structure29US 4,117,507 ASGS-ATES Componeti Elettronici S.p.A. · 1978
- Apparatus for transceiver signal isolation and voltage clamp28US 9,275,991 B2Analog Devices, Inc. · 2016
- Semiconductor device and radio communication device19US 8,860,093 B2Murata Manufacturing Co., Ltd. · 2014