Semiconductor devices for high frequency applications

A semiconductor device, comprising:

• a shallow trench isolation (STI) region of a semiconductor layer, the STI region including a deep trench isolation (DTI) region, wherein:
• the STI region includes an inner portion inside the DTI region;
• the STI region includes a first dielectric isolation structure with a first thickness with respect to a surface of the semiconductor layer;
• and
• the DTI region includes a second dielectric isolation structure with a second thickness with respect to the surface greater than the first thickness;
• a well region of the semiconductor layer surrounding the STI region, the well region having a greater dopant concentration than the semiconductor layer;
• and
• a component having a footprint located within the inner portion of the STI region.

A semiconductor device, comprising:

• a first semiconductor layer over a second semiconductor layer, the first semiconductor layer having a surface facing away from the second semiconductor layer;
• a doped structure within the first semiconductor layer, the doped structure including first and second doped portions that are laterally spaced apart from each other along the surface;
• a first isolation structure located between the first and second doped portions, the first isolation structure extended to a first depth from the surface;
• and
• an integrated circuit (IC) component over the first isolation structure, the IC component having a footprint between the first and second doped portions.