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US 9,048,284 B2Granted
Integrated RF front end system
AssigneeSkyworks Solutions, Inc.
InventorsMichael Joseph McPartlin, Mark M. Doherty
Life of this patent
Estimating the term…
Abstract
Systems and methods are disclosed for integrating functional components of front-end modules for wireless radios. Front-end modules disclosed may be dual-band front-end modules for use in 802.11ac-compliant devices. In certain embodiments, integration of front-end module components on a single die is achieved by implementing a high-resistivity layer or substrate directly underneath, adjacent to, and/or supporting SiGe BiCMOS technology elements.
Claims25
An integrated front-end module comprising:
- a silicon substrate having a high-resistivity portion;
- a bipolar transistor featuring a silicon or silicon-germanium alloy base disposed on the substrate above the high-resistivity portion;
- one or more passive devices disposed on the substrate above the high-resistivity portion;
- and
- a low-resistivity well located between the bipolar transistor and the one or more passive devices, the low-resistivity well providing at least partial electrical isolation between the bipolar transistor and the one or more passive devices.
2 more elements
A method of fabricating an integrated front-end module comprising:
- providing at least a portion of a high-resistivity bulk silicon substrate;
- forming one or more transistors on the high-resistivity substrate;
- forming one or more electrical devices on the high-resistivity substrate;
- and
- implanting a low-resistivity well between the one or more transistors and the one or more electrical devices, the low-resistivity well providing at least partial electrical isolation between the one or more transistors and the one or more electrical devices.
2 more elements
A semiconductor die comprising:
- a silicon substrate including a high-resistivity portion and being configured to receive a plurality of components;
- RF front-end circuitry disposed on the substrate, the RF front-end circuitry including a bipolar transistor featuring a silicon or silicon-germanium alloy base disposed above the high-resistivity portion, the RF front-end circuitry further including one or more passive or active devices disposed above the high-resistivity portion;
- and
- a low-resistivity well located between the bipolar transistor and the one or more passive or active devices, the low-resistivity well providing at least partial electrical isolation between the bipolar transistor and the one or more passive or active devices.
1 more element
A radio-frequency (RF) module comprising:
- a packaging substrate configured to receive a plurality of components;
- a die mounted on the packaging substrate, the die having a high-resistivity substrate portion, a switch, a power amplifier including an SiGe bipolar transistor disposed above the high-resistivity substrate portion, one or more passive devices above the high-resistivity portion, and a low-resistivity well located between the SiGe bipolar transistor and the one or more passive devices, the low-resistivity well providing at least partial electrical isolation between the bipolar transistor and the one or more passive devices;
- and
- a plurality of connectors configured to provide electrical connections between the die and the packaging substrate.
1 more element
A radio-frequency (RF) device comprising:
- a baseband circuit assembly configured to process RF signals;
- RF front-end circuitry disposed on a substrate having a high-resistivity portion, the RF front-end circuitry including a switch, one or more passive devices disposed above the high-resistivity portion, a power amplifier including a bipolar transistor featuring a silicon or silicon-germanium alloy base disposed above the high-resistivity portion, and a low-resistivity well located between the bipolar transistor and the one or more passive devices, the low-resistivity well providing at least partial electrical isolation between the bipolar transistor and the one or more passive devices;
- and
- an antenna in communication with at least a portion of the RF front-end circuitry to facilitate transmission and reception of the RF signals.
1 more element
Dependencies are inferred from the claim text.