Semiconductor device and radio communication device
AssigneeMurata Manufacturing Co., Ltd.
InventorsSatoshi Sasaki, Yasunari Umemoto, Yasuo Osone, Tsutomu Kobori, Chushiro Kusano, Isao Ohbu, Kenji Sasaki
Life of this patent
Estimating the term…
Loading patent…
AssigneeMurata Manufacturing Co., Ltd.
InventorsSatoshi Sasaki, Yasunari Umemoto, Yasuo Osone, Tsutomu Kobori, Chushiro Kusano, Isao Ohbu, Kenji Sasaki
Estimating the term…
A technology which allows a reduction in the thermal resistance of a semiconductor device used in a radio communication device, and the miniaturization thereof is provided. For example, the semiconductor device can include a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.
A radio communication device comprising a power amplifier,
Dependencies are inferred from the claim text.