H10D 84/0105
The built-in components being field-effect devices
Official title: {the built-in components being field-effect devices}
H10D84/0105 (The built-in components being field-effect devices) appears on 66 US grants and 34 published applications in this corpus.
Search patents in H10D- Granted patents
- 66
- Published applications
- 34
- Assignees
- 31
- Inventors
- 87
- Latest grant
- 10 Oct 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 4 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 5 | 0 |
| 2000 | 3 | 0 |
| 2001 | 3 | 3 |
| 2002 | 2 | 0 |
| 2003 | 2 | 3 |
| 2004 | 2 | 0 |
| 2005 | 2 | 2 |
| 2006 | 2 | 2 |
| 2007 | 4 | 1 |
| 2008 | 2 | 0 |
| 2009 | 0 | 1 |
| 2010 | 2 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 1 |
| 2013 | 1 | 1 |
| 2014 | 3 | 5 |
| 2015 | 2 | 1 |
| 2016 | 3 | 1 |
| 2017 | 0 | 1 |
| 2018 | 1 | 3 |
| 2019 | 1 | 4 |
| 2020 | 4 | 0 |
| 2021 | 0 | 2 |
| 2022 | 1 | 1 |
| 2023 | 2 | 1 |
| 2024 | 0 | 0 |
| 2025 | 0 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- MOS(metal oxide silicon) controlled thyristor device10 Oct 2023US 11,784,247 B2Electronics and Telecommunications Research Institute
- Metal oxide semiconductor-controlled thyristor device having uniform turn-off characteristic and method of manufacturing the same25 Apr 2023US 11,637,192 B2Electronics and Telecommunications Research Institute
- Automatically limiting power consumption by devices using infrared or radio communications29 Mar 2022US 11,289,619 B2Dell Products L. P.
- Transistor structures having reduced electrical field at the gate oxide and methods for making same17 Nov 2020US 10,840,367 B2Cree, Inc.
- Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base formed using epitaxial layer15 Sep 2020US 10,777,670 B2Pakal Technologies, Inc.
- Apparatus with integrated planar mosfet and integrated planar schottky barrier diode30 Apr 2026US 2026/0123027 A1Microchip Technology Incorporated
- Mos(metal oxide silicon) controlled thyristor device23 Mar 2023US 2023/0087416 A1Electronics and Telecommunications Research Institute
- Semiconductor device and method of forming a semiconductor structure28 Apr 2022US 2022/0130984 A1National Central University
- Metal oxide semiconductor-controlled thyristor device having uniform turn-off characteristic and method of manufacturing the same30 Dec 2021US 2021/0408265 A1Electronics and Telecommunications Research Institute
- Automatically limiting power consumption by devices using infrared or radio communications6 May 2021US 2021/0135037 A1Dell Products L. P.
Most cited
By later US patents
- Processes for manufacturing insulated-gate semiconductor devices with integral shorts89US 4,417,385 AGeneral Electric Company · 1983
- Small cell low contact resistance rugged power field effect devices and method of fabrication61US 5,119,153 AGeneral Electric Company · 1992
- Memory cell with trenched gated thyristor56US 7,440,310 B2Micron Technology, Inc. · 2008
- Method of forming a truck MOS gate or a power semiconductor device55US 5,783,491 AMitsubishi Denki Kabushiki Kaisha · 1998
- Process for manufacturing insulated-gate semiconductor devices with integral shorts47US 4,466,176 AGeneral Electric Company · 1984