Metal oxide semiconductor-controlled thyristor device having uniform turn-off characteristic and method of manufacturing the same

A method of manufacturing a metal oxide semiconductor (MOS)-controlled thyristor (MCT) device, the method comprising:

• forming a first conductive type base region doped with first conductive type impurities and a second conductive type emitter region doped with second conductive type impurities in the first conductive type base region, in a substrate;
• forming a spacer on a side surface of an oxide layer which is formed on the substrate and upward exposes the second conductive type emitter region;
• ion-implanting the first conductive type impurities into the second conductive type emitter region upward exposed by the spacer to form a first conductive type drain region of an off-field effect transistor (TFT) and to form a channel region of the off-FET defined between a junction surface of the second conductive type emitter region and a junction surface of the first conductive type drain region;
• ion-implanting the first conductive type impurities into the upward exposed channel region of the off-FET by removing the spacer;
• removing the oxide layer and forming a gate electrode layer, upward exposing the first conductive type drain region and the second conductive type emitter region, on the substrate;
• ion-implanting the second conductive type impurities into the second conductive type emitter region upward exposed by the gate electrode layer to form a second conductive type doping region;
• and
• forming an upper metal layer, used as a cathode electrode, on the gate electrode layer, the first conductive type drain region, and the second conductive type doping region and a lower metal layer, used as an anode electrode, on a bottom surface of the substrate.