Semiconductor device and method of forming a semiconductor structure
AssigneeNational Central University
InventorsYue-Ming HSIN, Meng-Hsuan TSAI, Chia-Jung TSAI, Xin-Rong YOU, Chih-Wei CHEN
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Abstract
A semiconductor device includes a substrate, a buffer layer disposed on the substrate, a barrier layer disposed on the buffer layer, a source, a drain, and a gate stack. The source, the drain, and the gate stack are disposed on the barrier layer. The gate stack includes a first epitaxial layer on the barrier layer, a second epitaxial layer on the first epitaxial layer, and a third epitaxial layer on the second epitaxial layer. The semiconductor device further includes a gate disposed on the gate stack.
Claims17
A semiconductor device, comprising:
- a substrate;
- a buffer layer, disposed on the substrate;
- a barrier layer, disposed on the buffer layer;
- a drain, a source, and a gate stack, disposed on the barrier layer, wherein the gate stack comprises a first epitaxial layer over the barrier layer and a second epitaxial layer over the first epitaxial layer;
- and
- a gate, disposed on the gate stack.
A semiconductor device, comprising:
- a substrate;
- a buffer layer, disposed on the substrate;
- a barrier layer, disposed on the buffer layer;
- a stack structure, disposed on the barrier layer;
- an anode, disposed on the stack structure;
- and
- a cathode, disposed on the barrier layer, the cathode surrounding the stack structure and the anode.
A method of forming a semiconductor structure, comprising:
- forming a buffer layer on a substrate;
- forming a barrier layer on the buffer layer;
- forming an epitaxial structure on the barrier layer, wherein the epitaxial structure comprises a first epitaxial layer, a second epitaxial layer over the first epitaxial layer, and a third epitaxial layer over the second epitaxial layer;
- and
- forming a first semiconductor device in a first region of the semiconductor structure, wherein the formation of the first semiconductor device comprises:
- performing a first etching process on the epitaxial structure to form a first gate stack from the epitaxial structure and to expose the portion of the barrier layer uncovered by the first gate stack;
- forming a first source and a first drain on the barrier layer;
- and
- forming a first gate on the first gate stack.
Dependencies are inferred from the claim text.