Back to results
US 2021/0408265 A1Published application
Metal oxide semiconductor-controlled thyristor device having uniform turn-off characteristic and method of manufacturing the same
AssigneeElectronics and Telecommunications Research Institute
InventorsKun Sik PARK, Jong Il WON, Doo Hyung CHO, Hyun Gyu JANG, Dong Yun JUNG
Life of this patent
Estimating the term…
Abstract
The present invention forms an off-FET channel having a uniform and short length by using a self-align process of a method of forming and recessing a spacer, thereby enhancing the current driving capability of an off-FET and the uniformity of a device operation.
Claims18
A method of manufacturing a metal oxide semiconductor (MOS)-controlled thyristor (MCT) device, the method comprising:
- forming a first conductive type base region doped with first conductive type impurities and a second conductive type emitter region doped with second conductive type impurities in the first conductive type base region, in a substrate;
- forming a spacer on a side surface of an oxide layer which is formed on the substrate and upward exposes the second conductive type emitter region;
- ion-implanting the first conductive type impurities into the second conductive type emitter region upward exposed by the spacer to form a first conductive type drain region of an off-field effect transistor (TFT) and to form a channel region of the off-FET defined between a junction surface of the second conductive type emitter region and a junction surface of the first conductive type drain region;
- ion-implanting the first conductive type impurities into the upward exposed channel region of the off-FET by removing the spacer;
- removing the oxide layer and forming a gate electrode layer, upward exposing the first conductive type drain region and the second conductive type emitter region, on the substrate;
- ion-implanting the second conductive type impurities into the second conductive type emitter region upward exposed by the gate electrode layer to form a second conductive type doping region;
- and
- forming an upper metal layer, used as a cathode electrode, on the gate electrode layer, the first conductive type drain region, and the second conductive type doping region and a lower metal layer, used as an anode electrode, on a bottom surface of the substrate.
5 more elements
An metal oxide semiconductor (MOS)-controlled thyristor (MCT) device comprising:
- a substrate including a first conductive type emitter layer doped with first conductive type impurities and a second conductive type base layer doped with the second conductive type impurities disposed on the first conductive type emitter layer;
- a first conductive type base region disposed in the second conductive type base layer;
- a second conductive type emitter region disposed in the first conductive type base region;
- a second conductive type doping region disposed in the second conductive type emitter region and a first conductive type drain region of an off-field effect transistor (TFT) surrounding the second conductive type doping region;
- a channel region of an off-FET doped with the first conductive type impurities and disposed between a junction surface of the first conductive type drain region and a junction surface of the second conductive type emitter region, in the second conductive type emitter region;
- a channel region of an on-FET disposed between the junction surface of the second conductive type emitter region and a junction surface of the first conductive type base region to be adjacent to the channel region of the off-FET, in the first conductive type base region;
- a gate electrode layer disposed on a whole surface of the substrate, the gate electrode layer including an opening portion upward exposing the second conductive type doping region and the first conductive type drain region;
- a cathode electrode layer disposed on the first conductive type drain region and the second conductive type doping region, upward exposed by the gate electrode layer and the opening portion, with an interlayer insulation layer therebetween;
- and
- an anode electrode layer disposed on a bottom surface of the substrate.
7 more elements
Dependencies are inferred from the claim text.