H10D 8/043
Of planar diodes
Official title: {of planar diodes}
H10D8/043 (Of planar diodes) appears on 432 US grants and 465 published applications in this corpus.
Search patents in H10D- Granted patents
- 432
- Published applications
- 465
- Assignees
- 189
- Inventors
- 786
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 4 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 3 | 0 |
| 1998 | 5 | 0 |
| 1999 | 6 | 0 |
| 2000 | 4 | 0 |
| 2001 | 6 | 3 |
| 2002 | 4 | 4 |
| 2003 | 1 | 4 |
| 2004 | 3 | 3 |
| 2005 | 2 | 4 |
| 2006 | 4 | 9 |
| 2007 | 5 | 4 |
| 2008 | 3 | 8 |
| 2009 | 1 | 14 |
| 2010 | 11 | 13 |
| 2011 | 14 | 16 |
| 2012 | 5 | 7 |
| 2013 | 18 | 20 |
| 2014 | 13 | 36 |
| 2015 | 34 | 41 |
| 2016 | 39 | 41 |
| 2017 | 40 | 39 |
| 2018 | 35 | 35 |
| 2019 | 30 | 34 |
| 2020 | 33 | 22 |
| 2021 | 23 | 29 |
| 2022 | 17 | 20 |
| 2023 | 17 | 20 |
| 2024 | 17 | 15 |
| 2025 | 20 | 20 |
| 2026 | 7 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor structure and method for manufacturing the same1 Sep 2026US 12,727,218 B2Enkris Semiconductor, Inc.
- Method for producing a semiconductor chip2 Jun 2026US 12,648,165 B2Imec Vzw
- Semiconductor device2 Jun 2026US 12,648,197 B2Rohm Co., Ltd.
- High-voltage depletion-mode current source, transistor, and fabrication methods19 May 2026US 12,635,221 B2Texas Instruments Incorporated
- Diode with contact structure including an improved barrier region and related manufacturing process5 May 2026US 12,622,040 B2STMicroelectronics S,r.l.
- Method of manufacturing a power diode20 Aug 2026US 2026/0247641 A1STMicroelectronics International N. V.
- Fast recovery diode with integrated current limiting resistor20 Aug 2026US 2026/0247668 A1Ipower Semiconductor
- High voltage diode with termination structure and method of its fabrication30 Jul 2026US 2026/0223383 A1Tower Semiconductor Ltd.
- Semiconductor device5 Mar 2026US 2026/0068246 A1Mitsubishi Electric Corporation
- Power Semiconductor Device and Method of Producing a Power Semiconductor Device25 Dec 2025US 2025/0393274 A1Infineon Technologies AG
Most cited
By later US patents
- Layered dielectric on silicon carbide semiconductor structures102US 6,246,076 B1Cree, Inc. · 2001
- Semiconductor diode with reduced recovery current100US 5,389,815 AMitsubishi Denki Kabushiki Kaisha · 1995
- Gallium nitride material devices and methods of forming the same72US 7,233,028 B2Nitronex Corporation · 2007
- Semiconductor device having a passivation layer71US 5,763,905 AABB Research Ltd. · 1998
- Fabrication of a SiC semiconductor device comprising a pn junction with a voltage absorbing edge64US 6,040,237 AABB Research Ltd. · 2000