Fast recovery diode with integrated current limiting resistor

A fast recovery diode comprising:

• a first semiconductor structure comprising a first layer having a first conductivity type;
• a first electrode of the fast recovery diode, the first electrode contacting a bottom surface of the first layer;
• a second semiconductor structure including a second layer having a second conductivity type, the second layer contacting the first semiconductor structure to form a junction;
• a second electrode of the fast recovery diode, the second electrode overlying the second semiconductor structure;
• a resistive semiconductor region comprising polysilicon, the resistive semiconductor region providing a current path between the second electrode and the second semiconductor structure;
• a first insulating layer on the second semiconductor structure, the resistive semiconductor region overlying a portion of the first insulating layer and contacting the second semiconductor layer through a first opening in the first insulating layer;
• and
• a second insulating layer on the resistive semiconductor region, the second electrode contacting the resistive semiconductor region through a second opening in the second insulating layer.