H10D 64/111
Field plates
Official title: {Field plates}
H10D64/111 (Field plates) appears on 7,381 US grants and 9,135 published applications in this corpus.
Search patents in H10D- Granted patents
- 7,381
- Published applications
- 9,135
- Assignees
- 843
- Inventors
- 7,352
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 8 | 0 |
| 1978 | 0 | 0 |
| 1979 | 3 | 0 |
| 1980 | 1 | 0 |
| 1981 | 7 | 0 |
| 1982 | 2 | 0 |
| 1983 | 6 | 0 |
| 1984 | 7 | 0 |
| 1985 | 5 | 0 |
| 1986 | 13 | 0 |
| 1987 | 11 | 0 |
| 1988 | 10 | 0 |
| 1989 | 10 | 0 |
| 1990 | 16 | 0 |
| 1991 | 15 | 0 |
| 1992 | 11 | 0 |
| 1993 | 19 | 0 |
| 1994 | 23 | 0 |
| 1995 | 32 | 0 |
| 1996 | 23 | 0 |
| 1997 | 26 | 0 |
| 1998 | 31 | 0 |
| 1999 | 37 | 0 |
| 2000 | 37 | 0 |
| 2001 | 37 | 17 |
| 2002 | 56 | 68 |
| 2003 | 62 | 83 |
| 2004 | 92 | 78 |
| 2005 | 50 | 114 |
| 2006 | 71 | 157 |
| 2007 | 70 | 159 |
| 2008 | 87 | 178 |
| 2009 | 126 | 185 |
| 2010 | 183 | 222 |
| 2011 | 198 | 259 |
| 2012 | 213 | 309 |
| 2013 | 272 | 366 |
| 2014 | 391 | 479 |
| 2015 | 441 | 505 |
| 2016 | 504 | 556 |
| 2017 | 505 | 536 |
| 2018 | 459 | 427 |
| 2019 | 460 | 496 |
| 2020 | 464 | 515 |
| 2021 | 399 | 491 |
| 2022 | 408 | 602 |
| 2023 | 347 | 603 |
| 2024 | 386 | 637 |
| 2025 | 454 | 624 |
| 2026 | 291 | 469 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Half-bridge circuit using monolithic flip-chip GAN power devices6 Oct 2026US 12,756,203 B2Navitas Semiconductor Limited
- Junction field effect transistor with bottom gate underlying drain and optionally partially underlying top gate and method6 Oct 2026US 12,757,423 B2Globalfoundries Singapore Pte. Ltd.
- Nitride-based bidirectional switching device and method for manufacturing the same6 Oct 2026US 12,757,426 B2Innoscience (Suzhou) Semiconductor Co., Ltd.
- Semiconductor device6 Oct 2026US 12,757,435 B2Rohm Co., Ltd.
- Trench-gate semiconductor device with trench including buried source6 Oct 2026US 12,757,437 B2Nexperia B. V.
- Electrostatic discharge circuitry for a high-voltage semiconductor device8 Oct 2026US 2026/0313927 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ldmos transistor design for providing immunity to cone defects8 Oct 2026US 2026/0313951 A1Microchip Technology Incorporated
- Method to implant p-type and/or n-type rings in a semiconductor device8 Oct 2026US 2026/0313952 A1Allegro MicroSystems, LLC
- Semiconductor device including termination trench structure or segment8 Oct 2026US 2026/0313955 A1Infineon Technologies Dresden GmbH
- Silicon carbide semiconductor device8 Oct 2026US 2026/0313956 A1Fuji Electric Co., Ltd.
Most cited
By later US patents
- Field plate in heterojunction bipolar transistor with improved break-down voltage512US 9,324,846 B1Globalfoundries Inc. · 2016
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry288US 5,072,266 ASiliconix Incorporated · 1991