H10D 64/117
Recessed field plates
Official title: {Recessed field plates, e.g. trench field plates or buried field plates}
H10D64/117 (Recessed field plates) appears on 3,638 US grants and 4,779 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,638
- Published applications
- 4,779
- Assignees
- 400
- Inventors
- 3,299
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 3 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 2 | 0 |
| 1995 | 5 | 0 |
| 1996 | 2 | 0 |
| 1997 | 8 | 0 |
| 1998 | 2 | 0 |
| 1999 | 6 | 0 |
| 2000 | 5 | 0 |
| 2001 | 5 | 7 |
| 2002 | 19 | 25 |
| 2003 | 19 | 45 |
| 2004 | 49 | 43 |
| 2005 | 23 | 60 |
| 2006 | 38 | 63 |
| 2007 | 29 | 72 |
| 2008 | 46 | 96 |
| 2009 | 67 | 92 |
| 2010 | 86 | 114 |
| 2011 | 113 | 122 |
| 2012 | 109 | 165 |
| 2013 | 133 | 179 |
| 2014 | 206 | 244 |
| 2015 | 216 | 271 |
| 2016 | 249 | 297 |
| 2017 | 273 | 277 |
| 2018 | 232 | 211 |
| 2019 | 224 | 254 |
| 2020 | 238 | 263 |
| 2021 | 210 | 273 |
| 2022 | 241 | 333 |
| 2023 | 181 | 330 |
| 2024 | 191 | 352 |
| 2025 | 243 | 337 |
| 2026 | 157 | 254 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Trench-gate semiconductor device with trench including buried source6 Oct 2026US 12,757,437 B2Nexperia B. V.
- Semiconductor device6 Oct 2026US 12,757,479 B2Fuji Electric Co., Ltd.
- Split gate trench device29 Sep 2026US 12,751,071 B2Excelliance MOS Corporation
- Gate-controlled diode and electronic circuit22 Sep 2026US 12,745,410 B2Mitsubishi Electric Corporation
- Semiconductor device with voltage resistant structure22 Sep 2026US 12,745,431 B2Rohm Co., Ltd.
- Method to implant p-type and/or n-type rings in a semiconductor device8 Oct 2026US 2026/0313952 A1Allegro MicroSystems, LLC
- Semiconductor device including termination trench structure or segment8 Oct 2026US 2026/0313955 A1Infineon Technologies Dresden GmbH
- Semiconductor device and method for fabricating the same8 Oct 2026US 2026/0313958 A1United Microelectronics Corp.
- Semiconductor device8 Oct 2026US 2026/0314068 A1Vanguard International Semiconductor Corporation
- Double gate transistor device and method of operating1 Oct 2026US 2026/0303088 A1Infineon Technologies Austria AG
Most cited
By later US patents
- Field plate in heterojunction bipolar transistor with improved break-down voltage512US 9,324,846 B1Globalfoundries Inc. · 2016
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008
- Silicon carbide power MOSFET with floating field ring and floating field plate237US 5,233,215 ANorth Carolina State University at Raleigh · 1993