H10D 64/112
Comprising multiple field plate segments
Official title: {comprising multiple field plate segments}
H10D64/112 (Comprising multiple field plate segments) appears on 1,849 US grants and 2,294 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,849
- Published applications
- 2,294
- Assignees
- 378
- Inventors
- 2,841
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 4 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 4 | 0 |
| 1987 | 2 | 0 |
| 1988 | 3 | 0 |
| 1989 | 0 | 0 |
| 1990 | 3 | 0 |
| 1991 | 5 | 0 |
| 1992 | 1 | 0 |
| 1993 | 8 | 0 |
| 1994 | 10 | 0 |
| 1995 | 14 | 0 |
| 1996 | 6 | 0 |
| 1997 | 10 | 0 |
| 1998 | 7 | 0 |
| 1999 | 7 | 0 |
| 2000 | 14 | 0 |
| 2001 | 11 | 5 |
| 2002 | 13 | 11 |
| 2003 | 8 | 11 |
| 2004 | 15 | 17 |
| 2005 | 6 | 12 |
| 2006 | 14 | 22 |
| 2007 | 10 | 27 |
| 2008 | 11 | 27 |
| 2009 | 17 | 28 |
| 2010 | 33 | 24 |
| 2011 | 26 | 38 |
| 2012 | 26 | 48 |
| 2013 | 43 | 79 |
| 2014 | 70 | 105 |
| 2015 | 101 | 126 |
| 2016 | 140 | 174 |
| 2017 | 144 | 162 |
| 2018 | 127 | 136 |
| 2019 | 146 | 131 |
| 2020 | 140 | 146 |
| 2021 | 123 | 139 |
| 2022 | 95 | 142 |
| 2023 | 114 | 166 |
| 2024 | 115 | 181 |
| 2025 | 117 | 167 |
| 2026 | 80 | 170 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Nitride-based bidirectional switching device and method for manufacturing the same6 Oct 2026US 12,757,426 B2Innoscience (Suzhou) Semiconductor Co., Ltd.
- Semiconductor device6 Oct 2026US 12,757,435 B2Rohm Co., Ltd.
- Semiconductor device and method for manufacturing the same22 Sep 2026US 12,745,441 B2Innoscience (Suzhou) Technology Co., Ltd.
- Nitride-based semiconductor device and method for manufacturing the same15 Sep 2026US 12,740,081 B2Innoscience (Suzhou) Technology Co., Ltd.
- Power semiconductor device and method of manufacturing same15 Sep 2026US 12,740,126 B2DB HiTek Co., Ltd.
- Electrostatic discharge circuitry for a high-voltage semiconductor device8 Oct 2026US 2026/0313927 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method to implant p-type and/or n-type rings in a semiconductor device8 Oct 2026US 2026/0313952 A1Allegro MicroSystems, LLC
- Hvic device with combined level shifter and boost diode in junction termination region1 Oct 2026US 2026/0303069 A1Alpha and Omega Semiconductor International LP
- Semiconductor device1 Oct 2026US 2026/0304857 A1Mitsubishi Electric Corporation
- High-electron-mobility transistors including a tiered field plate1 Oct 2026US 2026/0304885 A1GLOBALFOUNDRIES U. S. Inc.
Most cited
By later US patents
- Silicon carbide power MOSFET with floating field ring and floating field plate237US 5,233,215 ANorth Carolina State University at Raleigh · 1993
- Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode205US 6,346,451 B1Philips Electronics North America Corporation · 2002
- Semiconductor structure with improved smaller forward voltage loss and higher blocking capability163US 6,677,641 B2Fairchild Semiconductor Corporation · 2004
- Semiconductor device157US 6,037,632 AKabushiki Kaisha Toshiba · 2000
- High voltage transistor having edge termination utilizing trench technology144US 5,430,324 ASiliconix Incorporated · 1995