Nitride-based semiconductor device and method for manufacturing the same
AssigneeInnoscience (Suzhou) Technology Co., Ltd.
InventorsRonghui Hao, Jinhan Zhang, King Yuen Wong
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AssigneeInnoscience (Suzhou) Technology Co., Ltd.
InventorsRonghui Hao, Jinhan Zhang, King Yuen Wong
Estimating the term…
A nitride-based semiconductor device includes a first and a second nitride-based semiconductor layers, a source, a drain and a gate electrode, a doped nitride-based semiconductor layer, and a first field plate. The first field plate disposed over the doped nitride-based semiconductor layer. A vertical projection of the doped nitride-based semiconductor layer on the second nitride-based semiconductor layer overlaps with a vertical projection of the first field plate on the second nitride-based semiconductor layer, and a vertical projection of the gate electrode on the second nitride-based semiconductor layer is physically separated from the vertical projection of the first field plate on the second nitride-based semiconductor layer.
A nitride-based semiconductor device, comprising:
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