H10D 62/875
Being semiconductor metal oxide
Official title: {being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874)}
H10D62/875 (Being semiconductor metal oxide) appears on 606 US grants and 888 published applications in this corpus.
Search patents in H10D- Granted patents
- 606
- Published applications
- 888
- Assignees
- 177
- Inventors
- 1,215
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2006 | 0 | 1 |
| 2007 | 0 | 0 |
| 2008 | 0 | 2 |
| 2009 | 0 | 1 |
| 2010 | 0 | 11 |
| 2011 | 0 | 20 |
| 2012 | 5 | 13 |
| 2013 | 12 | 32 |
| 2014 | 25 | 46 |
| 2015 | 47 | 59 |
| 2016 | 56 | 82 |
| 2017 | 70 | 73 |
| 2018 | 65 | 41 |
| 2019 | 50 | 39 |
| 2020 | 30 | 59 |
| 2021 | 36 | 68 |
| 2022 | 39 | 65 |
| 2023 | 43 | 66 |
| 2024 | 54 | 49 |
| 2025 | 52 | 93 |
| 2026 | 22 | 68 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Liquid metal printed 2D ultrahigh mobility conducting oxide transistors11 Aug 2026US 12,707,904 B2Trustees of Dartmouth College
- Semiconductor device and electronic device19 May 2026US 12,632,718 B2Semiconductor Energy Laboratory Co.Ltd.
- Memory device and method of forming the same19 May 2026US 12,635,141 B2Taiwan Semiconductor Manufacturing Company, Ltd.
- Semiconductor element, method for manufacturing semiconductor element, semiconductor device, and method for manufacturing semiconductor device19 May 2026US 12,635,520 B2Novel Crystal Technology, Inc.
- III-Nitride/gallium oxide based high electron mobility transistors5 May 2026US 12,622,008 B2Northwestern University
- Dual gate ldmos devices for gate-all-around process flows8 Oct 2026US 2026/0313950 A1Avago Technologies International Sales Pte. Limited
- Semiconductor device and manufacturing method thereof1 Oct 2026US 2026/0304843 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Devices comprising a thick (alzga1-z)2o3 layer on a (001) ga2o3 substrate using a (alxga1-x)2o3 buffer layer, and methods of making and use thereof1 Oct 2026US 2026/0304878 A1Ohio State Innovation Foundation
- Semiconductor device and method of manufacturing the same24 Sep 2026US 2026/0293101 A1Kioxia Corporation
- Semiconductor structure24 Sep 2026US 2026/0293209 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Field effect transistor using oxide semicondutor and method for manufacturing the same247US 8,384,077 B2Idemitsu Kosan Co., Ltd. · 2013
- Thin film transistor, organic light-emitting diode display including the same, and manufacturing method thereof192US 9,768,310 B2Samsung Display Co., Ltd. · 2017
- Display device155US 8,304,765 B2Semiconductor Energy Laboratory Co.Ltd. · 2012
- Method for manufacturing semiconductor device91US 8,343,817 B2Semiconductor Energy Laboratory Co.Ltd. · 2013
- Semiconductor device91US 8,748,881 B2Semiconductor Energy Laboratory Co.Ltd. · 2014