Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a substrate;
• an oxide semiconductor layer that extends in a first direction intersecting with a surface of the substrate and contains a first element and oxygen (O);
• a first wiring faced to at least a part of the oxide semiconductor layer;
• a gate insulating layer that is disposed between the first wiring and the oxide semiconductor layer and at least contains one element of oxygen (O) or nitrogen (N);
• an insulating layer that includes a first part provided between the first wiring and the gate insulating layer and contains at least one element among oxygen (O), chlorine (Cl), and fluorine (F);
• and
• a barrier conductive layer that is disposed between the first wiring and the insulating layer and includes a second part, wherein
• a second element having a highest atomic concentration among elements contained in the gate insulating layer other than oxygen (O) and nitrogen (N) is silicon (Si), and
• a third element having a highest atomic concentration among elements contained in the insulating layer other than oxygen (O), chlorine (Cl), and fluorine (F) is one element selected from a group consisting of aluminum (Al), titanium (Ti), zinc (Zn), hafnium (Hf), yttrium (Y), scandium (Sc), tantalum (Ta), lanthanum (La), and vanadium (V).

A manufacturing method of a semiconductor device, wherein

• the semiconductor device includes:
• a substrate;
• an oxide semiconductor layer that extends in a first direction intersecting with a surface of the substrate and contains a first element and oxygen (O);
• a first wiring faced to at least a part of the oxide semiconductor layer;
• a gate insulating layer that is disposed between the first wiring and the oxide semiconductor layer and at least contains one element of oxygen (O) or nitrogen (N);
• an insulating layer that includes a first part provided between the first wiring and the gate insulating layer and contains at least one element among oxygen (O), chlorine (Cl), and fluorine (F);
• and
• a barrier conductive layer that includes a second part provided between the first wiring and the insulating layer and contains a first metal element,
• when an electronegativity of one element having a higher atomic concentration of oxygen (O) and nitrogen (N) contained in the gate insulating layer is a first electronegativity, and
• when an electronegativity of a second element having a highest atomic concentration among all elements contained in the gate insulating layer other than oxygen (O) and nitrogen (N) is a second electronegativity,
• an absolute value of a difference between the first electronegativity and the second electronegativity is a first value,
• when an electronegativity of an element having a highest atomic concentration among oxygen (O), chlorine (Cl), and fluorine (F) contained in the insulating layer is a third electronegativity, and
• when an electronegativity of a third element having a highest atomic concentration among all elements contained in the insulating layer other than oxygen (O), chlorine (Cl), and fluorine (F) is a fourth electronegativity,
• an absolute value of a difference between the third electronegativity and the fourth electronegativity is a second value,
• the method comprises the steps of:
• forming the gate insulating layer;
• forming the insulating layer on the gate insulating layer;
• and
• forming the barrier conductive layer on the insulating layer using a precursor containing the first metal element, and
• when an electronegativity of an element having a most atoms among chlorine (Cl), nitrogen (N), carbon (C), hydrogen (H), oxygen (O), and fluorine (F) contained in the precursor is a fifth electronegativity, and
• when an electronegativity of the first metal element contained in the precursor is a sixth electronegativity,
• an absolute value of a difference between the fifth electronegativity and the sixth electronegativity is a third value,
• an absolute value of a difference between the third value and the second value is larger than an absolute value of a difference between the third value and the first value.