H10D 48/366
Multistable devices
Official title: {Multistable devices; Devices having two or more distinct operating states}
H10D48/366 (Multistable devices) appears on 143 US grants and 143 published applications in this corpus.
Search patents in H10D- Granted patents
- 143
- Published applications
- 143
- Assignees
- 74
- Inventors
- 293
- Latest grant
- 28 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 3 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 1 |
| 2002 | 3 | 9 |
| 2003 | 6 | 5 |
| 2004 | 3 | 6 |
| 2005 | 7 | 9 |
| 2006 | 11 | 8 |
| 2007 | 3 | 4 |
| 2008 | 4 | 6 |
| 2009 | 5 | 4 |
| 2010 | 4 | 6 |
| 2011 | 6 | 8 |
| 2012 | 6 | 6 |
| 2013 | 7 | 8 |
| 2014 | 7 | 4 |
| 2015 | 5 | 5 |
| 2016 | 4 | 2 |
| 2017 | 3 | 6 |
| 2018 | 5 | 3 |
| 2019 | 4 | 3 |
| 2020 | 4 | 4 |
| 2021 | 1 | 6 |
| 2022 | 5 | 7 |
| 2023 | 5 | 8 |
| 2024 | 7 | 12 |
| 2025 | 8 | 3 |
| 2026 | 5 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Power regeneration in a memory device28 Jul 2026US 12,696,685 B2Micron Technology, Inc.
- Regulated mobile ion synapses26 May 2026US 12,641,855 B2International Business Machines Corporation
- Stacked electronic devices having independent gates24 Mar 2026US 12,588,273 B2International Business Machines Corporation
- FET with multi-value switching function10 Mar 2026US 12,575,139 B2Wenzhou University
- Semiconductor structure and method for fabricating same3 Feb 2026US 12,543,350 B2Changxin Memory Technologies, Inc.
- Semiconductor device and manufacturing method thereof23 Oct 2025US 2025/0331243 A1National Taiwan University
- Memory cell array with increased source bias voltage25 Sep 2025US 2025/0301652 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Power regeneration in a memory device30 Jan 2025US 2025/0040439 A1Micron Technology, Inc.
- Flash memory device and method thereof10 Oct 2024US 2024/0339547 A1National Taiwan University
- Stacked electronic devices having independent gates3 Oct 2024US 2024/0332082 A1International Business Machines Corporation
Most cited
By later US patents
- Method of making chalogenide memory device490US 5,789,277 AMicron Technology, Inc. · 1998
- Programmable cell for use in programmable electronic arrays477US 4,499,557 AEnergy Conversion Devices, Inc. · 1985
- Phase change material memory device414US 6,512,241 B1Intel Corporation · 2003
- Method for forming phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact400US 6,593,176 B2Ovonyx, Inc. · 2003
- Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact391US 6,534,781 B2Ovonyx, Inc. · 2003