H10D 48/045
Treatment of the surface of the selenium or tellurium layer after having
Official title: Treatment of the surface of the selenium or tellurium layer after having been made conductive
H10D48/045 (Treatment of the surface of the selenium or tellurium layer after having) appears on 5 US grants and 5 published applications in this corpus.
Search patents in H10D- Granted patents
- 5
- Published applications
- 5
- Assignees
- 3
- Inventors
- 5
- Latest grant
- 19 Jun 2018
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 1 | 1 |
| 2005 | 2 | 2 |
| 2006 | 1 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 1 |
| 2018 | 1 | 0 |
By publication year.
Recent patents
- Semiconductor packages including chip enablement pads19 Jun 2018US 10,002,851 B2SK hynix Inc.
- Intermediate semiconductor device having activated oxide-based layer for electroless plating9 May 2006US 7,042,010 B2Micron Technology, Inc.
- Activation of oxides for electroless plating31 May 2005US 6,900,128 B2Micron Technology, Inc.
- Activation of oxides for electroless plating29 Mar 2005US 6,872,659 B2Micron Technology, Inc.
- Method of forming semiconductor device having contact pad on source/drain region in peripheral circuit area24 Aug 2004US 6,780,707 B2Samsung Electronics Co., Ltd.
- Semiconductor packages including chip enablement pads12 Oct 2017US 2017/0294411 A1SK hynix Inc.
- Intermediate semiconductor device having activated oxide-based layer for electroless plating22 Sep 2005US 2005/0205933 A1Micron Technology, Inc.
- Activation of oxides for electroless plating3 Feb 2005US 2005/0023687 A1Micron Technology, Inc.
- Activation of oxides for electroless plating19 Feb 2004US 2004/0033687 A1Micron Technology, Inc.
- Method of forming semiconductor device having contact pad on source/drain region in peripheral circuit area18 Jul 2002US 2002/0094631 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Activation of oxides for electroless plating10US 6,900,128 B2Micron Technology, Inc. · 2005
- Activation of oxides for electroless plating9US 6,872,659 B2Micron Technology, Inc. · 2005
- Method of forming semiconductor device having contact pad on source/drain region in peripheral circuit area5US 6,780,707 B2Samsung Electronics Co., Ltd. · 2004
- Semiconductor packages including chip enablement pads1US 10,002,851 B2SK hynix Inc. · 2018
- Intermediate semiconductor device having activated oxide-based layer for electroless plating1US 7,042,010 B2Micron Technology, Inc. · 2006