Intermediate semiconductor device having activated oxide-based layer for electroless plating
AssigneeMicron Technology, Inc.
InventorNishant Sinha
Life of this patent
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Abstract
An intermediate semiconductor device that includes a semiconductor substrate and an oxide-based layer over the substrate. The oxide-based layer has an activated catalytic surface on at least one selected area thereof which is adapted for electroless plating. The intermediate may also include high aspect ratio capacitor containers, trenches, vias, and other openings whose surfaces can be made conductive by selectively electrolessly plating a metal or metal alloy thereon.
Claims18
An intermediate semiconductor device comprising,
- a semiconductor substrate;
- and
- an oxide-based layer over said substrate;
- said oxide-based layer having an activated catalytic surface formed by the sequential formation and removal of a titanium-based layer on said oxide-based layer on at least one selected area thereof which is adapted for electroless plating.
An intermediate semiconductor device comprising,
- a semiconductor substrate;
- and
- an oxide-based layer over said substrate;
- said oxide-based layer having a pretreate active catalytic surface formed by the sequential formation and removal of a titanium-based layer on said oxide-based layer on at least one selected area thereof which is adapted for electroless plating.
An intermediate semiconductor device comprising,
- a semiconductor substrate;
- and
- an oxide-based layer over said substrate, said oxide-based layer having at least one opening therein;
- said oxide-based layer having an activated catalytic surface formed by the sequential formation and removal of a titanium-based layer on said oxide-based layer on at least one selected area thereof which is adapted for electroless plating.
An intermediate semiconductor device comprising,
- a semiconductor substrate;
- a oxide-based layer over said semiconductor substrate;
- and
- a capacitor container in said oxide-based layer;
- the walls of said capacitor container formed by said oxide-based layer, and said oxide-based layer having an activated catalytic surface formed by the sequential formation and removal of a titanium-based layer on said oxide-based layer adapted for electroless plating.
Dependencies are inferred from the claim text.