Activation of oxides for electroless plating
AssigneeMicron Technology, Inc.
InventorNishant Sinha
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Abstract
The present invention provides approaches for electroless deposition of conductive materials onto the surface of oxide-based materials, including nonconductive metal oxides, in a manner that does not require intervening conductive pastes, nucleation layers, or additional seed or activation layers formed over the surface of the oxide-based layer. According to one embodiment of the present invention, a layer of a titanium-based material is formed over an oxide-based surface. The layer of titanium-based material is subsequently removed from the surface of the oxide-based layer in a manner such that the surface of the oxide-based layer is activated for electroless deposition. A metal or metal alloy is then plated over the oxide-based surface using electroless plating techniques.
Claims33
A method of fabricating a semiconductor device comprising:
- forming an oxide-based layer over a semiconductor substrate;
- forming at least one opening in said oxide-based layer;
- forming a titanium-based layer over said oxide-based layer such that said titanium-based layer overlies at least a portion of said at least one opening;
- removing said titanium-based layer from said oxide-based layer;
- depositing a first conductive layer over said oxide-based layer using electroless plating;
- and,
- depositing a second conductive layer over said first conductive layer.
A method of filling a via comprising:
- etching an opening in an oxide-based layer of a semiconductor device;
- filling at least said opening with a titanium-based material;
- removing said titanium-based material from said opening;
- electrolessly plating directly to said oxide-based layer at least within said opening with a first conductive material;
- and,
- filling said opening with a second conductive material.
A method of filling a via comprising:
- etching an opening in an oxide-based layer of a semiconductor device;
- depositing a titanium-based material onto said oxide-based layer such that said titanium-based material at least partially fills said opening;
- etching said titanium-based material from said opening;
- electrolessly plating directly to said oxide-based layer at least within said opening with a first conductive material;
- and,
- filling said opening with a second conductive material.
A method of filling a via comprising:
- etching an opening in an oxide-based layer of a semiconductor device;
- depositing a titanium-based material onto said oxide-based layer such that said titanium-based material at least partially fills said opening, said titanium-based material deposited using a chemical vapor deposition process at a temperature of at least 550 degrees Celsius;
- wet chemical etching said titanium-based material from said opening;
- electrolessly plating directly to said oxide-based layer at least within said opening with a first conductive material;
- and,
- filling said opening with a second conductive material.
A semiconductor device fabricated according to the process comprising:
- forming an oxide-based layer over a semiconductor substrate;
- forming at least one opening in said oxide-based layer;
- depositing a titanium-based layer over said oxide-based layer such that said titanium-based layer overlies at least a portion of said at least one opening;
- removing said titanium-based layer from said oxide-based layer;
- depositing a first conductive layer over said oxide-based layer using electroless plating;
- and,
- depositing a second conductive layer over said first conductive layer.
A method of forming a capacitor comprising:
- forming a first dielectric layer over a base substrate;
- forming a capacitor container in said first dielectric layer;
- forming a titanium-based layer over at least a portion of said first dielectric layer and within said capacitor container;
- removing said titanium-based layer from said first dielectric layer;
- performing electroless plating of a first conductive layer over said first dielectric layer and within said capacitor container;
- forming a second conductive layer over said first conductive layer at least within said capacitor container;
- depositing a second dielectric layer within said capacitor container and over said second conductive layer;
- and,
- depositing a third conductive layer over said second dielectric layer.
Dependencies are inferred from the claim text.