H10B 99/10
Memory cells having a cross-point geometry
Official title: {Memory cells having a cross-point geometry}
H10B99/10 (Memory cells having a cross-point geometry) appears on 90 US grants and 116 published applications in this corpus.
Search patents in H10B- Granted patents
- 90
- Published applications
- 116
- Assignees
- 55
- Inventors
- 208
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 2 |
| 2003 | 3 | 5 |
| 2004 | 5 | 6 |
| 2005 | 1 | 6 |
| 2006 | 4 | 12 |
| 2007 | 8 | 13 |
| 2008 | 6 | 7 |
| 2009 | 6 | 3 |
| 2010 | 7 | 4 |
| 2011 | 6 | 6 |
| 2012 | 5 | 6 |
| 2013 | 5 | 3 |
| 2014 | 4 | 1 |
| 2015 | 2 | 3 |
| 2016 | 1 | 0 |
| 2017 | 2 | 1 |
| 2018 | 3 | 2 |
| 2019 | 1 | 3 |
| 2020 | 3 | 3 |
| 2021 | 1 | 1 |
| 2022 | 2 | 2 |
| 2023 | 3 | 7 |
| 2024 | 1 | 5 |
| 2025 | 4 | 12 |
| 2026 | 2 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for operating memory device1 Sep 2026US 12,725,653 B2Macronix International Co., Ltd.
- Memory device and method for operating the same13 Jan 2026US 12,527,009 B2Macronix International Co., Ltd.
- Memory device7 Oct 2025US 12,439,590 B2Southern University of Science and Technology
- 2T0C semiconductor structure5 Aug 2025US 12,382,624 B2Changxin Memory Technologies, Inc.
- Semiconductor memory device27 May 2025US 12,317,507 B2Samsung Electronics Co., Ltd.
- Module and method for manufacturing same3 Sep 2026US 2026/0262233 A1Ultramemory Inc.
- Module and method for manufacturing same27 Aug 2026US 2026/0255616 A1Ultramemory Inc.
- Nonvolatile Memory Devices Based on Hybrid Magnetic-Superconductor Soliton States30 Apr 2026US 2026/0123292 A1The United States of America as represented by the Secretary of the Navy
- Replacement channel integration for three dimensional memory cell architectures6 Nov 2025US 2025/0344414 A1Micron Technology, Inc.
- Memory architectures with partially filled piers6 Nov 2025US 2025/0344415 A1Micron Technology, Inc.
Most cited
By later US patents
- Nanoscopic wire-based devices and arrays247US 6,781,166 B2President and Fellows of Harvard College · 2004
- Methods of nanotubes films and articles208US 7,264,990 B2Nantero, Inc. · 2007
- Electromechanical memory having cell selection circuitry constructed with nanotube technology162US 6,643,165 B2Nantero, Inc. · 2003
- Methods of nanotube films and articles158US 6,835,591 B2Nantero, Inc. · 2004
- Stacked carrier three-dimensional memory module and semiconductor device using the same129US 5,973,392 ANEC Corporation · 1999