Method for operating memory device

A method for operating a memory device, comprising:

• providing a memory device, wherein the memory device comprises:
• a plurality of first electrodes stacked along a first direction;
• a plurality of second electrodes penetrating through the first electrodes along the first direction;
• and
• a plurality of memory layers disposed between the first electrodes and the second electrodes, and the memory layers surrounding the second electrodes, wherein a plurality of memory cells are formed at intersections between the first electrodes, the second electrodes and the memory layers;
• selecting a selected memory cell in the memory cells;
• applying −⅔ V to a selected second electrode in the second electrodes, wherein the selected second electrode is in electrical contact with the selected memory cell;
• applying ⅓ V to a selected first electrode in the first electrodes, wherein the selected first electrode is in electrical contact with the selected memory cell;
• applying 0 V to unselected second electrodes in the second electrodes;
• and
• applying 0 V to unselected first electrodes in the first electrodes.