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US 12,527,009 B2Granted
Memory device and method for operating the same
AssigneeMacronix International Co., Ltd.
InventorsErh-Kun Lai, Hsiang-Lan Lung
Life of this patent
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Abstract
A memory device and a method for operating a memory device are provided. The memory device includes a stack structure including a memory array stack and a staircase stack, an insulating film on the memory array stack, a conductive film on the staircase stack and on a sidewall of the insulating film, a pillar element on the staircase stack and passing through the conductive film, and memory cells in the memory array stack and electrically connected to the pillar element.
Claims20
A memory device, comprising:
- a stack structure comprising a memory array stack and a staircase stack;
- an insulating film on the memory array stack along a first direction;
- a conductive film on the staircase stack and on a sidewall of the insulating film;
- a pillar element on the staircase stack and passing through the conductive film;
- and
- memory cells in the memory array stack and electrically connected to the pillar element,
- wherein the conductive film and the insulating film are disposed along a second direction perpendicular to the first direction.
4 more elements
Dependencies are inferred from the claim text.