Memory device
AssigneeSouthern University of Science and Technology
InventorsGuobiao Zhang, Zhitang Song
Life of this patent
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Abstract
A cross-point memory includes a plurality of memory devices, with each device comprising a memory layer between first and second address lines. In one preferred embodiment, the memory layer comprises an OTS (Ovonic Threshold Switch) film and an antifuse film. In another preferred embodiment, the memory layer comprises an OTS film having a first switch voltage (i.e. forming voltage Vform) greater than all subsequent switch voltages (i.e. threshold voltage Vth). The cross-point memory is preferably a three-dimensional one-time-programmable memory (3D-OTP), including horizontal 3D-OTP and vertical 3D-OTP.
Claims11
A three-dimensional memory, comprising:
- a semiconductor substrate;
- a plurality of first and second address lines above said semiconductor substrate, wherein said first and second address lines intersect each other;
- and,
- a plurality of one-time-programmable memory (OTP) devices disposed at the intersections between said first and second address lines;
- each of said devices comprising a memory layer between said first and second address lines, wherein said memory layer comprises at least an OTS film, and the total thickness of said memory layer is smaller than or equal to 60 nm.
Dependencies are inferred from the claim text.