H03K 2217/0018
Special modifications or use of the back gate voltage of a fet
Official title: Special modifications or use of the back gate voltage of a FET
H03K2217/0018 (Special modifications or use of the back gate voltage of a fet) appears on 760 US grants and 674 published applications in this corpus.
Search patents in H03K- Granted patents
- 760
- Published applications
- 674
- Assignees
- 251
- Inventors
- 1,249
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 3 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 5 | 0 |
| 1993 | 2 | 0 |
| 1994 | 4 | 0 |
| 1995 | 14 | 0 |
| 1996 | 5 | 0 |
| 1997 | 16 | 0 |
| 1998 | 9 | 0 |
| 1999 | 14 | 0 |
| 2000 | 20 | 0 |
| 2001 | 16 | 5 |
| 2002 | 17 | 14 |
| 2003 | 15 | 18 |
| 2004 | 15 | 24 |
| 2005 | 16 | 23 |
| 2006 | 28 | 18 |
| 2007 | 24 | 35 |
| 2008 | 21 | 39 |
| 2009 | 25 | 33 |
| 2010 | 43 | 34 |
| 2011 | 33 | 27 |
| 2012 | 28 | 29 |
| 2013 | 21 | 21 |
| 2014 | 24 | 38 |
| 2015 | 28 | 29 |
| 2016 | 32 | 27 |
| 2017 | 28 | 22 |
| 2018 | 27 | 41 |
| 2019 | 41 | 30 |
| 2020 | 43 | 34 |
| 2021 | 21 | 18 |
| 2022 | 21 | 31 |
| 2023 | 22 | 29 |
| 2024 | 34 | 33 |
| 2025 | 21 | 14 |
| 2026 | 10 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Main-auxiliary field-effect transistor configurations25 Aug 2026US 12,719,470 B2Skyworks Solutions, Inc.
- Multi-channel multiplexer18 Aug 2026US 12,712,545 B2Texas Instruments Incorporated
- Silicon-on-insulator substrate processing for transistor enhancement11 Aug 2026US 12,707,716 B2Skyworks Solutions, Inc.
- Bidirectional GaN FET with single gate16 Jun 2026US 12,658,915 B2Efficient Power Conversion Corporation
- Semiconductor device2 Jun 2026US 12,648,217 B2Infineon Technologies Austria AG
- Rectifier23 Jul 2026US 2026/0213673 A1Rohm Co., Ltd.
- Rf switch structure design using local body bias techniques for reduced area23 Jul 2026US 2026/0213746 A1Qorvo US, Inc.
- Bootstrapped switch circuit with high linearity16 Jul 2026US 2026/0205134 A1Semiconductor Components Industries, LLC
- Superjunction transistor device having transistor cells with a compensation region2 Jul 2026US 2026/0190410 A1Infineon Technologies Austria AG
- Semiconductor device and electronic control system14 May 2026US 2026/0135552 A1Renesas Electronics Corporation
Most cited
By later US patents
- Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink247US 7,910,993 B2Peregrine Semiconductor Corporation · 2011
- Output circuit for interfacing integrated circuits having different power supply potentials210US 5,396,128 AMotorola, Inc. · 1995
- Pass gate circuit with body bias control190US 5,880,620 AXilinx, Inc. · 1999
- Circuit and method for PMOS device N-well bias control175US 6,377,112 B1Semiconductor Components Industries, LLC · 2002
- Semiconductor integrated circuit incorporated with substrate bias control circuit168US 5,461,338 ANEC Corporation · 1995