Semiconductor device
AssigneeInfineon Technologies Austria AG
InventorsHyeongnam Kim, Mohamed Imam
Life of this patent
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Abstract
In an embodiment, a semiconductor device includes: a main bi-directional switch formed on a semiconductor substrate and including first and second gates, a first source electrically connected to a first voltage terminal, a second source electrically connected to a second voltage terminal, and a common drain; and a substrate control circuit. The substrate control circuit includes: a first diode and a second diode; a discharge circuit including a first transistor and a second transistor connected in a common source configuration to the semiconductor substrate; and a gate potential control circuit including a third diode and a fourth diode. The first diode has a forward voltage Vf1 and the third diode has a forward voltage Vf3, where Vf1≥1.1Vf4 or Vf1≥1.2Vf4 or Vf1≥1.5Vf4 or Vf1≥2Vf4.
Claims15
A semiconductor device, comprising:
- a main bi-directional switch formed on a semiconductor substrate and comprising first and second gates, a first source electrically connected to a first voltage terminal, and a second source electrically connected to a second voltage terminal;
- and
- a substrate control circuit, comprising:
- a first diode and a second diode, wherein an anode of the first diode and an anode of the second diode are connected to the semiconductor substrate, wherein a cathode of the first diode is connected to the first source of the main bi-directional switch and a cathode of the second diode is connected to the second source of the main bi-directional switch;
- a discharge circuit comprising a first transistor and a second transistor connected in a common source configuration to the semiconductor substrate, wherein a first drain of the first transistor is connected to the first source of the main bi-directional switch and a second drain of the second transistor is connected to the second source of the main bi-directional switch;
- a gate potential control circuit comprising a third diode and a fourth diode,
- wherein an anode of the third diode is connected to a second gate of the second transistor and a cathode of the third diode is connected to the first source of the main bi-directional switch, wherein an anode of the fourth diode is connected to a first gate of the first transistor and a cathode of the fourth diode is connected to the second source of the main bi-directional switch, wherein the first diode has a forward voltage Vf1 and the third diode has a forward voltage Vf3, wherein Vf1≥1.1Vf3 or Vf1≥1.2Vf3 or Vf1≥1.5Vf3 or Vf1≥2Vf3,
- or
- wherein the anode of the third diode is connected to a first gate of the first transistor and the cathode of the third diode is connected to the second source of the main bi-directional switch, wherein the anode of the fourth diode is connected to a second gate of the second transistor and the cathode of the fourth diode is connected to the first source of the main bi-directional switch, wherein the first diode has a forward voltage Vf1 and the fourth diode has a forward voltage Vf4, wherein Vf1≥1.1Vf4 or Vf1≥1.2Vf4 or Vf1≥1.5Vf4 or Vf1≥2Vf4,
- or
- wherein the anode of the third diode is connected to a first gate of the first transistor and the cathode of the third diode is connected to the first source of the main bi-directional switch, wherein the anode of the fourth diode is connected to a second gate of the second transistor and the cathode of the fourth diode is connected to the second source of the main bi-directional switch,
- wherein the first diode has a forward voltage Vf1 and the third diode has a forward voltage Vf3, wherein Vf1≥1.1Vf3 or Vf1≥1.2Vf3 or Vf1≥1.5Vf3 or Vf1≥2Vf3.
Dependencies are inferred from the claim text.