Silicon-on-insulator substrate processing for transistor enhancement

A packaged radio frequency module comprising:

• a package substrate;
• and
• a silicon-on-insulator die attached to the package substrate, the silicon-on-insulator die including a silicon substrate broken into two or more substrate regions by a dielectric, the two or more substrate regions including a plurality of islands that are laterally isolated from one another on all sides by the dielectric, the silicon-on-insulator die further including a buried oxide layer formed over the silicon substrate, and an active silicon layer formed over the buried oxide layer and including a plurality of silicon-on-insulator transistors, the plurality of islands forming a plurality of isolation resistors that provide isolation between two or more gates of the plurality of silicon-on-insulator transistors.