Main-auxiliary field-effect transistor configurations

A method for performing a switching function, the method comprising:

• directing a radio frequency (RF) signal to an input signal node of a circuit assembly;
• directing the RF signal from the input signal node to a branch including a main path in parallel with an auxiliary path, the auxiliary path including an auxiliary field-effect transistor (FET), the main path including a main FET that is coupled in parallel with the auxiliary FET such that the main FET has a source node coupled to the source node of the auxiliary FET and a drain node coupled to the drain node of the auxiliary FET, a body node of the auxiliary FET coupled to a gate node of the auxiliary FET, a body node of the main FET coupled to a gate node of the main FET;
• providing a main bias voltage to the gate node of the main FET using a main bias network of the circuit assembly, the main bias voltage configured to bias the main FET in a strong inversion region;
• and
• providing an auxiliary bias voltage to the gate node of the auxiliary FET using an auxiliary bias network of the circuit assembly, the auxiliary bias voltage configured to bias the auxiliary FET in a weak inversion region, the auxiliary bias voltage configured to cause the auxiliary FET to generate harmonics that interfere destructively with harmonics generated by the main FET;
• and
• directing the RF signal from the branch to an output signal node of the circuit assembly such that the RF signal output at the output signal node has improved linearity relative to a signal through a circuit assembly without the main path in parallel with the auxiliary path.