H01S 5/32341
Blue laser based on gan or gap
Official title: {blue laser based on GaN or GaP}
H01S5/32341 (Blue laser based on gan or gap) appears on 1,295 US grants and 1,349 published applications in this corpus.
Search patents in H01S- Granted patents
- 1,295
- Published applications
- 1,349
- Assignees
- 341
- Inventors
- 1,894
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 3 | 0 |
| 1997 | 11 | 0 |
| 1998 | 25 | 0 |
| 1999 | 28 | 0 |
| 2000 | 35 | 0 |
| 2001 | 48 | 29 |
| 2002 | 45 | 66 |
| 2003 | 59 | 68 |
| 2004 | 61 | 83 |
| 2005 | 66 | 75 |
| 2006 | 52 | 60 |
| 2007 | 37 | 62 |
| 2008 | 45 | 66 |
| 2009 | 42 | 63 |
| 2010 | 68 | 66 |
| 2011 | 41 | 48 |
| 2012 | 59 | 46 |
| 2013 | 37 | 41 |
| 2014 | 42 | 32 |
| 2015 | 39 | 41 |
| 2016 | 37 | 38 |
| 2017 | 41 | 50 |
| 2018 | 42 | 55 |
| 2019 | 69 | 54 |
| 2020 | 54 | 57 |
| 2021 | 43 | 50 |
| 2022 | 36 | 48 |
| 2023 | 37 | 56 |
| 2024 | 35 | 44 |
| 2025 | 28 | 38 |
| 2026 | 19 | 13 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Light emitting device25 Aug 2026US 12,719,231 B2Nichia Corporation
- Light emitting device18 Aug 2026US 12,712,331 B2Nichia Corporation
- Control and localization of porosity in III-nitrides and methods of using and making thereof11 Aug 2026US 12,707,907 B2Yale University
- Optical device and method of manufacture4 Aug 2026US 12,701,720 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Red green blue laser module16 Jun 2026US 12,658,676 B2KYOCERA SLD Laser, Inc.
- Red green blue laser module8 Oct 2026US 2026/0312372 A1KYOCERA SLD Laser, Inc.
- Optoelectronic semiconductor component20 Aug 2026US 2026/0246233 A1ams-OSRAM International GmbH
- Surface emitting laser, method for fabricating surface emitting laser20 Aug 2026US 2026/0246239 A1Sanoh Industrial Co., Ltd.
- Method for producing a semiconductor laser and semiconductor laser13 Aug 2026US 2026/0237959 A1ams-OSRAM International GmbH
- Light source6 Aug 2026US 2026/0227052 A1YLX Incorporated
Most cited
By later US patents
- Nitride semiconductor element and production method for nitride semiconductor element498US 6,818,465 B2Sony Corporation · 2004
- Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well413US 6,046,464 ANorth Carolina State University · 2000
- Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same357US 5,679,965 ANorth Carolina State University · 1997
- Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same351US 5,670,798 ANorth Carolina State University · 1997
- Light-emitting gallium nitride-based compound semiconductor device301US 5,578,839 ANichia Chemical Industries, Ltd. · 1996