H01S 5/2272
Grown by a mask induced selective growth
Official title: {grown by a mask induced selective growth}
H01S5/2272 (Grown by a mask induced selective growth) appears on 181 US grants and 96 published applications in this corpus.
Search patents in H01S- Granted patents
- 181
- Published applications
- 96
- Assignees
- 71
- Inventors
- 311
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 6 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 7 | 0 |
| 1995 | 7 | 0 |
| 1996 | 11 | 0 |
| 1997 | 8 | 0 |
| 1998 | 9 | 0 |
| 1999 | 12 | 0 |
| 2000 | 8 | 0 |
| 2001 | 9 | 6 |
| 2002 | 10 | 11 |
| 2003 | 8 | 6 |
| 2004 | 8 | 6 |
| 2005 | 4 | 11 |
| 2006 | 11 | 5 |
| 2007 | 2 | 7 |
| 2008 | 3 | 2 |
| 2009 | 6 | 9 |
| 2010 | 5 | 2 |
| 2011 | 2 | 0 |
| 2012 | 4 | 1 |
| 2013 | 2 | 2 |
| 2014 | 1 | 0 |
| 2015 | 2 | 6 |
| 2016 | 5 | 3 |
| 2017 | 2 | 5 |
| 2018 | 8 | 2 |
| 2019 | 0 | 2 |
| 2020 | 2 | 1 |
| 2021 | 0 | 1 |
| 2022 | 1 | 4 |
| 2023 | 0 | 3 |
| 2024 | 1 | 1 |
| 2025 | 3 | 0 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Nitride semiconductor element and production method for nitride semiconductor element498US 6,818,465 B2Sony Corporation · 2004
- Integrated thermal ink jet printhead and method of manufacture112US 4,847,630 AHewlett-Packard Company · 1989
- Semiconductor devices77US 6,459,712 B2Hitachi, Ltd. · 2002
- Strained quantum well structure75US 5,671,242 AMitsubishi Denki Kabushiki Kaisha · 1997
- Epitaxial lateral overgrowth of gallium nitride based semiconductive oxide selective growth mask and method for fabricating the same69US 6,320,209 B1Sharp Kabushiki Kaisha · 2001