Manufacturing Method for Semiconductor Device

A method for manufacturing a semiconductor device, the method comprising:

• forming a first cladding layer on a substrate;
• forming a first semiconductor layer on the first cladding layer;
• forming a first selective growth mask in which a first region on the first semiconductor layer is open, the first selective growth mask having a first width in an opening direction;
• forming a second selective growth mask in which a second region on the first semiconductor layer is open, the second selective growth mask having a second width in the opening direction, wherein the second width is different in dimension from the first width;
• stacking a second semiconductor layer, a first active layer, and a third semiconductor layer in the first region by selective growth using the first selective growth mask;
• stacking a fourth semiconductor layer, a second active layer, and a fifth semiconductor layer in the second region by selective growth using the second selective growth mask;
• forming a third selective growth mask on the third semiconductor layer;
• forming a fourth selective growth mask on the fifth semiconductor layer;
• processing the first active layer and the third semiconductor layer by etching using the third selective growth mask to form a first ridge structure in which the first active layer and a second cladding layer are stacked in the first region;
• processing the second active layer and the third semiconductor layer by etching using the fourth selective growth mask to form a second ridge structure in which the second active layer and a third cladding layer are stacked in the second region;
• forming a first burying layer burying a side of the first ridge structure by selective growth using the first selective growth mask and the third selective growth mask;
• and
• forming a second burying layer burying a side of the second ridge structure by selective growth using the second selective growth mask and the fourth selective growth mask.

A method for manufacturing a semiconductor device, the method comprising:

• forming a first cladding layer on a substrate;
• forming a first semiconductor layer on the first cladding layer;
• forming a first selective growth mask having a first opening area to expose a first region on the first semiconductor layer;
• forming a second selective growth mask having a second opening area to expose a second region on the first semiconductor layer, wherein the second opening area is different in dimension from the first opening area;
• stacking a second semiconductor layer, a first active layer, and a third semiconductor layer in the first region by selective growth using the first selective growth mask;
• stacking a fourth semiconductor layer, a second active layer, and a fifth semiconductor layer in the second region by selective growth using the second selective growth mask;
• forming a third selective growth mask on the third semiconductor layer;
• forming a fourth selective growth mask on the fifth semiconductor layer;
• processing the first active layer and the third semiconductor layer by etching using the third selective growth mask to form a first ridge structure in which the first active layer and a second cladding layer are stacked in the first region;
• processing the second active layer and the third semiconductor layer by etching using the fourth selective growth mask to form a second ridge structure in which the second active layer and a third cladding layer are stacked in the second region;
• forming a first burying layer burying a side of the first ridge structure by selective growth using the first selective growth mask and the third selective growth mask;
• and
• forming a second burying layer burying a side of the second ridge structure by selective growth using the second selective growth mask and the fourth selective growth mask.