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US 2024/0413614 A1Published application
Manufacturable gallium and nitrogen containing coupled waveguide devices
AssigneeKYOCERA SLD Laser, Inc.
InventorsPhillip Skahan, Christian Zollner
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Abstract
The present disclosure provides optical devices and methods for forming the optical devices. In some embodiments, the optical devices include active and passive regions. The active regions may include gallium and nitrogen containing epitaxial material, and the passive regions may include waveguide structures. The active and passive regions may be arranged on a carrier wafer in an end-to-end configuration. In other embodiments, the optical devices include laser devices or gain regions and dielectric waveguides. The laser devices or gain regions may include gallium and nitrogen containing epitaxial material.
Claims21
A method for manufacturing an optical device, the method comprising:
- providing a carrier wafer;
- providing a first substrate having an array of first mesas, each of the first mesas comprising:
- a gallium and nitrogen containing epitaxial material, the gallium and nitrogen containing epitaxial material comprising a first release material overlying the first substrate and one or more n-type gallium and nitrogen containing layers, one or more light emitting gallium and nitrogen containing layers comprising an active region configured to emit electromagnetic radiation at a first wavelength, and one or more p-type gallium and nitrogen containing layers overlying the first release material;
- and
- a first interface region overlying the gallium and nitrogen containing epitaxial material;
- bonding the first interface region of at least a fraction of the first mesas to the carrier wafer to form first bonded structures;
- releasing the first bonded structures to transfer the fraction of the first mesas to the carrier wafer to form first mesa regions on the carrier wafer;
- providing a second substrate having an array of passive waveguide mesas, each of the passive waveguide mesas comprising:
- a second release material overlying the second substrate;
- a passive waveguide region overlying the second release material;
- and
- a second interface region overlying the passive waveguide region;
- bonding the second interface region of at least a fraction of the passive waveguide mesas to the carrier wafer to form second bonded structures;
- and
- releasing the second bonded structures to transfer the fraction of the passive waveguide mesas to the carrier wafer to form second mesa regions on the carrier wafer, wherein each of the first mesa regions is arranged adjacent to a corresponding one of the second mesa regions on the carrier wafer in an end-to-end configuration.
12 more elements
An optical device, comprising:
- a carrier wafer;
- a laser device comprising a gallium and nitrogen containing epitaxial material disposed on the carrier wafer, the gallium and nitrogen containing epitaxial material comprising a first interface region bonded to the carrier wafer, one or more p-type gallium and nitrogen containing layers overlying the first interface region, one or more light emitting gallium and nitrogen containing layers overlying the one or more p-type gallium and nitrogen containing layers, and one or more n-type gallium and nitrogen containing layers overlying the one or more light emitting gallium and nitrogen containing layers;
- and
- a dielectric waveguide overlying the one or more n-type gallium and nitrogen containing layers of the gallium and nitrogen containing epitaxial material, the dielectric waveguide comprising a dielectric core sandwiched between dielectric cladding regions, wherein the laser device and the dielectric waveguide are arranged and configured so that electromagnetic radiation generated by the laser device is coupled upwards into the dielectric waveguide and emitted by the dielectric waveguide.
1 more element
A method for manufacturing an optical device, the method comprising:
- providing a carrier wafer;
- providing a first substrate having an array of first mesas, each of the first mesas comprising:
- a gallium and nitrogen containing epitaxial material, the gallium and nitrogen containing epitaxial material comprising a first release material overlying the first substrate and one or more n-type gallium and nitrogen containing layers, one or more light emitting gallium and nitrogen containing layers comprising an active region configured to emit electromagnetic radiation at a first wavelength, and one or more p-type gallium and nitrogen containing layers overlying the first release material;
- and
- a first interface region overlying the gallium and nitrogen containing epitaxial material;
- bonding the first interface region of at least a fraction of the first mesas to the carrier wafer to form first bonded structures;
- releasing the first bonded structures to transfer the fraction of the first mesas to the carrier wafer to form first mesa regions on the carrier wafer;
- processing the first mesa regions to form laser devices or gain sections having first facets on each end;
- forming a dielectric region overlying each of the first mesa regions on the carrier wafer, wherein the dielectric region comprises a dielectric core sandwiched between dielectric cladding regions;
- and
- processing the dielectric region on each of the first mesa regions to form dielectric waveguides having second facets on each end, wherein each laser device and corresponding dielectric waveguide are arranged and configured so that electromagnetic radiation generated by the laser device is coupled upwards into the dielectric waveguide.
8 more elements
-22. (canceled)
Dependencies are inferred from the claim text.