Semiconductor device and method for manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorKazuyuki ONOE
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Abstract
A semiconductor device according to the present disclosure includes a main part that includes a semiconductor substrate, a first cladding layer provided on the semiconductor substrate, an active layer provided on the first cladding layer, and a second cladding layer provided on the active layer, and in which a flat part and a mesa part are formed, the mesa part including the active layer and a first embedded layer covering a top surface of the flat part and a side surface of the mesa part, wherein the first embedded layer has a projecting part on a top surface of a portion provided in a region within a height of the mesa part from a boundary between the mesa part and the flat part in the top surface of the flat part.
Claims10
A semiconductor device, comprising:
- a main part that includes a semiconductor substrate, a first cladding layer of a first type which is one of an n type and a p type, the first cladding layer being provided on the semiconductor substrate, an active layer provided on the first cladding layer, and a second cladding layer of a second type which is the other of the n type and the p type, the second cladding layer being provided on the active layer, and in which a flat part and a mesa part are formed, the mesa part being provided adjacent to the flat part, projecting upward with respect to the flat part and including the active layer;
- a first embedded layer that is of the second type, and has a first portion configured to cover a top surface of the flat part and a second portion configured to cover a side surface of the mesa part;
- a second embedded layer that is provided on the first embedded layer and is of the first type;
- a first electrode provided above the mesa part;
- and
- a second electrode provided below the mesa part,
- wherein the first embedded layer has a projecting part on a top surface of a portion provided in a region within a height of the mesa part from a boundary between the mesa part and the flat part in the top surface of the flat part.
A method for manufacturing a semiconductor device, comprising:
- forming, on a semiconductor substrate, a first cladding layer of a first type which is one of an n type and a p type, forming an active layer on the first cladding layer, forming, on the active layer, a second cladding layer of a second type which is the other of the n type and the p type to form a main part having the semiconductor substrate, the first cladding layer, the active layer, and the second cladding layer;
- forming, in the main part, a flat part and a mesa part that is provided to be adjacent to the flat part, projects upward with respect to the flat part, and includes the active layer;
- forming a first semiconductor layer being of the second type and formed into a lump shape in a region within a height of the mesa part from a boundary between the mesa part and the flat part in a top surface of the flat part;
- covering a side surface of the mesa part, the top surface of the flat part, and the first semiconductor layer with a second semiconductor layer of the second type to form a first embedded layer having the first semiconductor layer and the second semiconductor layer;
- forming a second embedded layer of the first type on the first embedded layer;
- forming a first electrode above the mesa part;
- and
- forming a second electrode below the mesa part.
Dependencies are inferred from the claim text.