H01S 5/2231
With inner confining structure only between the active layer and the upper
Official title: {with inner confining structure only between the active layer and the upper electrode}
H01S5/2231 (With inner confining structure only between the active layer and the upper) appears on 970 US grants and 640 published applications in this corpus.
Search patents in H01S- Granted patents
- 970
- Published applications
- 640
- Assignees
- 201
- Inventors
- 1,275
- Latest grant
- 31 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 5 | 0 |
| 1985 | 0 | 0 |
| 1986 | 3 | 0 |
| 1987 | 5 | 0 |
| 1988 | 7 | 0 |
| 1989 | 11 | 0 |
| 1990 | 18 | 0 |
| 1991 | 22 | 0 |
| 1992 | 26 | 0 |
| 1993 | 25 | 0 |
| 1994 | 28 | 0 |
| 1995 | 34 | 0 |
| 1996 | 38 | 0 |
| 1997 | 21 | 0 |
| 1998 | 44 | 0 |
| 1999 | 38 | 0 |
| 2000 | 27 | 0 |
| 2001 | 34 | 22 |
| 2002 | 38 | 40 |
| 2003 | 59 | 54 |
| 2004 | 54 | 76 |
| 2005 | 47 | 104 |
| 2006 | 67 | 66 |
| 2007 | 49 | 55 |
| 2008 | 29 | 43 |
| 2009 | 47 | 35 |
| 2010 | 46 | 27 |
| 2011 | 27 | 18 |
| 2012 | 16 | 8 |
| 2013 | 12 | 7 |
| 2014 | 8 | 6 |
| 2015 | 15 | 14 |
| 2016 | 9 | 4 |
| 2017 | 4 | 9 |
| 2018 | 6 | 6 |
| 2019 | 6 | 7 |
| 2020 | 5 | 7 |
| 2021 | 4 | 7 |
| 2022 | 3 | 8 |
| 2023 | 7 | 10 |
| 2024 | 4 | 4 |
| 2025 | 8 | 2 |
| 2026 | 4 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor laser and semiconductor laser device31 Mar 2026US 12,592,540 B2Mitsubishi Electric Corporation
- Semiconductor waveguide optical gain device with lateral current confinement31 Mar 2026US 12,592,546 B1HieFo Corporation
- Semiconductor laser for preventing hole burning effect10 Mar 2026US 12,573,815 B2Lumentum Japan, Inc.
- High-reliability low-defect semiconductor light-emitting device and method for manufacturing same3 Feb 2026US 12,542,416 B2Everbright Institute of Semiconductor Photonics Co., Ltd.
- Semiconductor waveguide optical gain device with lateral current confinement or optical mode shaping28 Oct 2025US 12,456,849 B1HieFo Corporation
- Semiconductor light-emitting element and method of manufacturing the same12 Feb 2026US 2026/0045772 A1Nuvoton Technology Corporation Japan
- Broad-area diode laser comprising integrated p-n tunnel junction2 Oct 2025US 2025/0309616 A1
- Semiconductor light-emitting element6 Mar 2025US 2025/0079792 A1Hamamatsu Photonics K.K.
- Semiconductor laser device and method for manufacturing semiconductor laser device14 Nov 2024US 2024/0380182 A1Mitsubishi Electric Corporation
- High-reliability low-defect semiconductor light-emitting device and method for manufacturing same4 Jul 2024US 2024/0222931 A1Everybright Institute of Semiconductor Photonics Co., Ltd.
Most cited
By later US patents
- Semiconductor substrate, semiconductor device and method of manufacturing the same275US 6,069,394 AMatsushita Electronics Corporation · 2000
- Illuminating light source device using semiconductor laser element228US 5,535,230 A1996
- Nitride-compound semiconductor device176US 6,316,785 B1Kabushiki Kaisha Toshiba · 2001
- Broadband light emitting device164US 7,019,325 B2Exalos AG · 2006
- Nitride compound semiconductor light emitting device139US 6,242,761 B1Kabushiki Kaisha Toshiba · 2001