Semiconductor light-emitting element

2:

• The semiconductor light-emitting element according to claim 1, wherein a light intensity distribution of the light image output from each of the plurality of phase modulation areas includes a sinusoidal distribution in which a period or phase in at least one direction differs for each phase modulation area in at least two phase modulation areas of the plurality of phase modulation areas.

3:

• The semiconductor light-emitting element according to claim 1, wherein a light intensity distribution of the light image output from each of the plurality of phase modulation areas includes a sinusoidal distribution in which a period or phase in two directions perpendicular to each other differs for each phase modulation area in at least two phase modulation areas of the plurality of phase modulation areas.

4:

• The semiconductor light-emitting element according to claim 1, wherein, when a virtual tetragonal lattice along the virtual plane is set and a straight line passing through a corresponding lattice point and being oblique by same angle with respect to the tetragonal lattice is set for each of a plurality of lattice points of the tetragonal lattice, a centroid of each of the plurality of different-refractive-index regions is disposed on corresponding straight line in each of the plurality of phase modulation areas, and a distance between the centroid of each of the plurality of different-refractive-index regions and the corresponding lattice point of each of the plurality of different-refractive-index regions is individually set according to a predetermined light image as the light image.

5:

• The semiconductor light-emitting element according to claim 4, wherein the phase modulation layer further includes a connection area located between neighboring phase modulation areas out of the plurality of phase modulation areas,
• wherein the connection area includes a basic region with the first refractive index and a plurality of different-refractive-index regions with the second refractive index, and
• wherein centroids of the plurality of different-refractive-index regions of the connection area are located at the lattice points of the tetragonal lattice.

6:

• The semiconductor light-emitting element according to claim 5, wherein a planar shape of the connection area when seen in a stacking direction of the semiconductor stacked layer is a lattice shape.

7:

• The semiconductor light-emitting element according to claim 4, wherein areas of the plurality of different-refractive-index regions on a section perpendicular to a thickness direction of the phase modulation layer are individually set according to a predetermined light image as the light image.

8:

• The semiconductor light-emitting element according to claim 4, wherein tetragonal lattices of neighboring phase modulation areas out of the plurality of phase modulation areas are offset from each other.

9:

• The semiconductor light-emitting element according to claim 4, further comprising a π/4 plate provided to face a light emission surface of the semiconductor light-emitting element,
• wherein tetragonal lattices of neighboring phase modulation areas out of the plurality of phase modulation areas are offset from each other by n·a+a/2 (where a is a lattice spacing, and n is an integer equal to or greater than 0).

10:

• The semiconductor light-emitting element according to claim 1, wherein the first electrode includes the plurality of electrode parts,
• wherein the stacked structure further includes a clad layer provided between a layer group including the phase modulation layer and the active layer and the first face, and
• wherein the clad layer includes a high-resistance region located between neighboring phase modulation areas out of the plurality of phase modulation areas when seen in a stacking direction of the semiconductor stacked layer.

11:

• The semiconductor light-emitting element according to claim 10, wherein the phase modulation layer is provided between the clad layer and the active layer, and
• wherein the high-resistance region extends from a boundary of the clad layer on the first face side to the phase modulation layer.

12:

• The semiconductor light-emitting element according to claim 10, wherein a planar shape of the high-resistance region when seen in the stacking direction of the semiconductor stacked layer is a lattice shape.