H01J 37/32486
Means for reducing recombination coefficient
Official title: {Means for reducing recombination coefficient}
H01J37/32486 (Means for reducing recombination coefficient) appears on 6 US grants and 18 published applications in this corpus.
Search patents in H01J- Granted patents
- 6
- Published applications
- 18
- Assignees
- 10
- Inventors
- 52
- Latest grant
- 21 Oct 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 1 |
| 2015 | 0 | 1 |
| 2016 | 0 | 2 |
| 2017 | 1 | 1 |
| 2018 | 0 | 3 |
| 2019 | 1 | 0 |
| 2020 | 0 | 0 |
| 2021 | 1 | 0 |
| 2022 | 0 | 3 |
| 2023 | 0 | 1 |
| 2024 | 1 | 1 |
| 2025 | 2 | 1 |
| 2026 | 0 | 2 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Plasma processing apparatus with tunable electrical characteristic21 Oct 2025US 12,451,329 B2Tokyo Electron Limited
- Macroscopic texturing for anodized and coated surfaces26 Aug 2025US 12,400,837 B2Lam Research Corporation
- Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma5 Mar 2024US 11,920,239 B2Lam Research Corporation
- Apparatus and method for the reduction of impurities in films11 May 2021US 11,001,926 B2Gallium Enterprises Pty Ltd
- Apparatus for plasma atomic layer deposition31 Dec 2019US 10,519,549 B2The Japan Steel Works, Ltd.
- Cleancoat and related methods for substrate processing chambers17 Sep 2026US 2026/0279745 A1APPLIED Materials.Inc.
- Plasma processing apparatus with tunable electrical characteristic15 Jan 2026US 2026/0018380 A1Tokyo Electron Limited
- Coatings on inner surfaces of particle containment chambers19 Jun 2025US 2025/0201529 A1Helion Energy, Inc.
- Minimizing radical recombination using ald silicon oxide surface coating with intermittent restoration plasma4 Jul 2024US 2024/0218509 A1Lam Research Corporation
- Uniformity control for plasma processing using wall recombination6 Jul 2023US 2023/0215702 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma24US 9,828,672 B2Lam Research Corporation · 2017
- Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma3US 11,920,239 B2Lam Research Corporation · 2024
- Apparatus and method for the reduction of impurities in films1US 11,001,926 B2Gallium Enterprises Pty Ltd · 2021